SI4425BDY-T1-E3 Vishay, SI4425BDY-T1-E3 Datasheet - Page 4
![MOSFET P-CH 30V 8.8A 8-SOIC](/photos/5/42/54248/pkg_5498_sml.jpg)
SI4425BDY-T1-E3
Manufacturer Part Number
SI4425BDY-T1-E3
Description
MOSFET P-CH 30V 8.8A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet
1.SI4425BDY-T1-E3.pdf
(6 pages)
Specifications of SI4425BDY-T1-E3
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 11.4A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.8A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.012 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
8.8 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-11.4A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
19mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-400mV
Power Dissipation Pd
2.5W
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4425BDY-T1-E3TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4425BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
151
Company:
Part Number:
SI4425BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4425BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4425BDY-T1-E3-S
Manufacturer:
SILI
Quantity:
1 272
Part Number:
SI4425BDY-T1-E3-S
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4425BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.8
0.6
0.4
0.2
0.0
- 50
0.01
0.1
2
1
10
- 25
-4
0.2
Duty Cycle = 0.5
0.1
0.05
0.02
0
Threshold Voltage
T
Single Pulse
J
25
- Temperature (°C)
10
-3
50
I
D
Normalized Thermal Transient Impedance, Junction-to-Ambient
= 250 µA
75
0.01
100
0.1
10
100
1
0.1
10
-2
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
A
> minimum V
= 25 °C
V
150
DS
Square Wave Pulse Duration (s)
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
1
10
-1
GS
BVDSS Limited
at which R
10
DS(on)
30
25
20
15
10
5
0
1
10
I
DM
is specified
-2
Limited
Single Pulse Power, Junction-to-Ambient
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
100
-1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Time (s)
T
A
t
S09-0767-Rev. E, 04-May-09
1
= P
t
Document Number: 72000
2
DM
Z
10
thJA
thJA
100
t
t
1
2
(t)
= 70 °C/W
100
600
600