SI7464DP-T1-E3 Vishay, SI7464DP-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7464DP-T1-E3
• Description: MOSFET N-CH 200V 1.8A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7464DP-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.8A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7464DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72052.
Document Number: 72052
S09-0227-Rev. C, 09-Feb-09
0.01
0.1
2
1
10
- 4
0.1
Duty Cycle = 0.5
0.2
Single Pulse
0.02
0.05
Normalized Thermal Transient Impedance, Junction-to-Case
10
- 3
Square Wave Pulse Duration (s)
10
- 2
10
- 1
Vishay Siliconix
Si7464DP
www.vishay.com
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