SI7464DP-T1-E3 Vishay, SI7464DP-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI7464DP-T1-E3
• Description: MOSFET N-CH 200V 1.8A PPAK 8SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7464DP-T1-E3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 240 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 1.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SO-8
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.8A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 260mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7464DP-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72052
S09-0227-Rev. C, 09-Feb-09
0.4
0.3
0.2
0.1
0.0
0.1
10
10
8
6
4
2
0
1
0.0
0
0
Source-Drain Diode Forward Voltage
V
I
D
DS
On-Resistance vs. Drain Current
= 2.8 A
0.2
= 100 V
V
SD
2
3
Q
T
g
J
- Source-to-Drain Voltage (V)
I
D
= 150 °C
- Total Gate Charge (nC)
V
- Drain Current (A)
Gate Charge
0.4
GS
= 6 V
4
6
0.6
V
GS
6
9
T
= 10 V
0.8
J
= 25 °C
1.0
12
8
0.5
0.4
0.3
0.2
0.1
0.0
800
600
400
200
2.5
2.0
1.5
1.0
0.5
0.0
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
- 25
V
I
D
GS
= 2.8 A
C
V
V
2
rss
= 10 V
GS
DS
T
J
20
0
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
25
C
Capacitance
oss
4
C
iss
50
Vishay Siliconix
40
6
75
I
D
Si7464DP
= 2.8 A
www.vishay.com
100
60
8
125
150
10
80
3