IRFR9110PBF Vishay, IRFR9110PBF Datasheet - Page 5
![MOSFET P-CH 100V 3.1A DPAK](/photos/5/46/54696/pkg_5973_sml.jpg)
IRFR9110PBF
Manufacturer Part Number
IRFR9110PBF
Description
MOSFET P-CH 100V 3.1A DPAK
Manufacturer
Vishay
Specifications of IRFR9110PBF
Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 1.9A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
3.1A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
8.7nC @ 10V
Input Capacitance (ciss) @ Vds
200pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.1 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-3.1A
Drain Source Voltage Vds
-100V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-4V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFR9110PBF
Manufacturer:
Toshiba
Quantity:
86 995
Part Number:
IRFR9110PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 91279
S10-1135-Rev. C, 10-May-10
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR9110, IRFU9110, SiHFR9110, SiHFU9110
10 %
90 %
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
V
V
GS
DS
R
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
G
- 10 V
V
GS
t
d(on)
V
DS
t
r
D.U.T.
Vishay Siliconix
R
D
t
d(off)
t
f
+
-
www.vishay.com
V
DD
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