IRFR9010PBF Vishay, IRFR9010PBF Datasheet - Page 5

• Manufacturer Part Number: IRFR9010PBF
• Description: MOSFET P-CH 50V 5.3A DPAK
• Manufacturer: Vishay

Specifications of IRFR9010PBF

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 5.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 9.1nC @ 10V
• Input Capacitance (ciss) @ Vds: 240pF @ 25V
• Power - Max: 25W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 1.7 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.3 A
• Power Dissipation: 25000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.3A
• Drain Source Voltage Vds: -50V
• On Resistance Rds(on): 500mohm
• Rds(on) Test Voltage Vgs: -10V
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 91378
S10-1135-Rev. C, 10-May-10
Fig. 12 - Maximum Drain Current vs. Case Temperature
Fig. 11 - Typical On-Resistance vs. Drain Current
IRFR9010, IRFU9010, SiHFR9010, SiHFU9010
Fig. 13a - Maximum Avalanche vs. Starting Junction
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Fig. 13b - Unclamped Inductive Test Circuit
Fig. 13c - Unclamped Inductive Waveforms
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Vishay Siliconix
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