ZXMN0545G4TA Diodes Zetex, ZXMN0545G4TA Datasheet - Page 3

• Manufacturer Part Number: ZXMN0545G4TA
• Description: MOSFET N-CH 450V 140MA SOT-223
• Manufacturer: Diodes Zetex

Specifications of ZXMN0545G4TA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 450V
• Current - Continuous Drain (id) @ 25° C: 140mA
• Vgs(th) (max) @ Id: 3V @ 1mA
• Input Capacitance (ciss) @ Vds: 70pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: ZXMN0545G4TR

ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
(2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
ISSUE 1 - JANUARY 2006
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source On-State
Resistance
Forward Transconductance
Input Capacitance
Common Source Output
Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
(2)(3)
(2)(3)
(1)
(2)
(2)
(2)(3)
(2)(3)
(1)
(1)(2)
(2)
SYMBOL
BV
V
I
I
I
R
g
C
C
C
t
t
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
GS(th)
DS(on)
fs
iss
oss
rss
DSS
amb
MIN.
450
150
100
1
= 25°C unless otherwise stated)
2%
3
MAX.
400
20
10
50
70
10
16
10
3
4
7
7
UNIT
mA
mS
nA
µA
µA
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
CONDITIONS
I
I
V
V
V
T=125°C
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
ZXMN0545G4
=
=450 V, V
=405 V, V
=25 V, V
=10V, I
=25V, I
=25V, V
=25V, I
20V, V
(2)
GS
DS
D
D
D
GS
=100mA
GS
=100mA
=100mA
= V
=0V
GS
GS
DS
=0V, f=1MHz
=10V
=0V
=0V,
GS
=0V