ZXMN0545G4TA Diodes Zetex, ZXMN0545G4TA Datasheet

MOSFET N-CH 450V 140MA SOT-223

ZXMN0545G4TA

Manufacturer Part Number
ZXMN0545G4TA
Description
MOSFET N-CH 450V 140MA SOT-223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN0545G4TA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
450V
Current - Continuous Drain (id) @ 25° C
140mA
Vgs(th) (max) @ Id
3V @ 1mA
Input Capacitance (ciss) @ Vds
70pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
ZXMN0545G4TR
450V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This 450V enhancement mode N-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage circuits.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ZXMN
0545
ISSUE 1 - JANUARY 2006
DEVICE
ZXMN0545G4TA
ZXMN0545G4TC
(BR)DSS
High voltage
Low on-resistance
Fast switching speed
Low gate drive
Low threshold
SOT223 package variant engineered to increase spacing between
high voltage pins
Off-line power supply start-up circuitry
= 450V; R
DS(ON)
REEL SIZE
(inches)
13
7
= 50 ; I
TAPE WIDTH (mm)
12mm embossed
12mm embossed
D
= 140mA
1
1,000 units
4,000 units
QUANTITY
PER REEL
ZXMN0545G4
PINOUT - TOP VIEW
N/C

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ZXMN0545G4TA Summary of contents

Page 1

... Low threshold • SOT223 package variant engineered to increase spacing between high voltage pins APPLICATIONS • Off-line power supply start-up circuitry ORDERING INFORMATION DEVICE REEL SIZE (inches) ZXMN0545G4TA 7 ZXMN0545G4TC 13 DEVICE MARKING ZXMN 0545 ISSUE 1 - JANUARY 2006 = 140mA D TAPE WIDTH (mm) QUANTITY PER REEL ...

Page 2

ZXMN0545G4 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current (V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Power Dissipation at T =25°C amb Linear derating factor ...

Page 3

ELECTRICAL CHARACTERISTICS (at T PARAMETER SYMBOL Drain-Source BV Breakdown Voltage Gate-Source Threshold V GS(th) Voltage Gate-Body Leakage I GSS Zero Gate Voltage Drain I DSS Current (1) On-State Drain Current I D(on) Static Drain-Source On-State R DS(on) (1) Resistance (1)(2) ...

Page 4

ZXMN0545G4 ...

Page 5

ISSUE 1 - JANUARY 2006 TYPICAL CHARACTERISTICS 5 ZXMN0545G4 ...

Page 6

ZXMN0545G4 PACKAGE OUTLINE Controlling dimensions are in millimeters. Approximate conversions are given in inches PACKAGE DIMENSIONS Millimeters Inches DIM Min Max Min Max A - 1.80 - 0.071 A1 0.02 0.10 0.0008 0.004 b 0.66 0.84 0.026 0.033 b2 2.90 ...

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