ZXMN4A06GTA Diodes Zetex, ZXMN4A06GTA Datasheet - Page 5

• Manufacturer Part Number: ZXMN4A06GTA
• Description: MOSFET N-CH 40V 5A SOT223
• Manufacturer: Diodes Zetex

Specifications of ZXMN4A06GTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 18.2nC @ 10V
• Input Capacitance (ciss) @ Vds: 770pF @ 40V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMN4A06GTR

ISSUE 1 - MAY 2002
Typical Transfer Characteristics
0.1
0.1
10
10
10
1
1
1
On-Resistance v Drain Current
1
V
V
T = 25° C
0.1
DS
GS
T = 150° C
I
Output Characteristics
D
Drain-Source Voltage (V)
Gate-Source Voltage (V)
2V
Drain Current (A)
2
1
V
10V
GS
1
4V
T = 25° C
2.5V
1.5V
V
3
TYPICAL CHARACTERISTICS
DS
10
T = 25° C
= 10V
10
3V
2.5V
3.5V
3V
4V
2V
3.5V
V
10V
GS
4
5
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
0.1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
10
0.1
10
1
-50
0.2
1
Tj Junction Temperature (° C)
V
V
T = 150° C
0.1
DS
SD
0.4
Output Characteristics
Drain-Source Voltage (V)
Source-Drain Voltage (V)
T = 150° C
0
0.6
V
I
D
GS
= 250uA
10V
1
V
I
0.8
= V
D
ZXMN4A06G
50
GS
= 4.5A
= 10V
DS
T = 25° C
1.0
100
10
4V
1.2
R
V
3.5V
3V
2.5V
DS(on)
2V
1.5V
GS(th)
V
GS
150
1.4