ZXMN4A06GTA Diodes Zetex, ZXMN4A06GTA Datasheet

MOSFET N-CH 40V 5A SOT223

ZXMN4A06GTA

Manufacturer Part Number
ZXMN4A06GTA
Description
MOSFET N-CH 40V 5A SOT223
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN4A06GTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
5A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
18.2nC @ 10V
Input Capacitance (ciss) @ Vds
770pF @ 40V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
ZXMN4A06GTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ZXMN4A06GTA
Quantity:
5 000
40V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 1 - MAY 2002
DEVICE
ZXMN4A06GTA
ZXMN4A06GTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC - DC Converters
Audio Output Stages
Relay and Solenoid driving
Motor control
ZXMN
4A06
= 40V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.05
WIDTH
12mm
12mm
TAPE
I
D
= 7A
QUANTITY
1000 units
4000 units
PER REEL
1
ZXMN4A06G
Top View
SOT223

Related parts for ZXMN4A06GTA

ZXMN4A06GTA Summary of contents

Page 1

... Low threshold Low gate drive SOT223 package APPLICATIONS Converters Audio Output Stages Relay and Solenoid driving Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN4A06GTA 7” 12mm ZXMN4A06GTC 13” 12mm DEVICE MARKING ZXMN 4A06 ISSUE 1 - MAY 2002 QUANTITY PER REEL ...

Page 2

ZXMN4A06G ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V =10V =10V =10V Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode)(c) Power ...

Page 3

R DS(on) Limited 100ms 100m 10ms Single Pulse T = 25° C 10m amb 1 V Drain-Source Voltage (V) DS Safe Operating Area 25° C amb 0 ...

Page 4

ZXMN4A06G ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse ...

Page 5

T = 25° 0.1 0 Drain-Source Voltage (V) DS Output Characteristics 150° 25° Gate-Source Voltage (V) GS Typical Transfer Characteristics 2V 10 ...

Page 6

ZXMN4A06G TYPICAL CHARACTERISTICS 6 ISSUE 1 - MAY 2002 ...

Page 7

PACKAGE OUTLINE PACKAGE DIMENSIONS MILLIMETRES MILLIMETRES DIM DIM MIN MAX MIN A 1.80 D 6.30 A1 0.02 0.10 e 2.30 BASIC A2 1.55 1.65 e1 4.60 BASIC b 0.66 0.84 E 6.70 b2 2.90 3.10 E1 3.30 C 0.23 0.33 ...

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