ZVN3306FTA Diodes Zetex, ZVN3306FTA Datasheet - Page 2

• Manufacturer Part Number: ZVN3306FTA
• Description: MOSFET N-CH 60V 150MA SOT23-3
• Manufacturer: Diodes Zetex
• Type: Small Signalr

Specifications of ZVN3306FTA

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 150mA
• Vgs(th) (max) @ Id: 2.4V @ 1mA
• Input Capacitance (ciss) @ Vds: 35pF @ 18V
• Power - Max: 330mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 5Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±20V
• Continuous Drain Current: 150mA
• Power Dissipation: 330mW
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: MC; ZVN3306FTR

ZVN3306F
Normalised R
0.2
1.0
0.8
1.0
0.8
0.4
0.6
0.4
0.2
0.6
0
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-80 -60
0
0
Saturation Characteristics
V
V
Transfer Characteristics
GS-
DS
-40 -20
2
2
Gate Source Voltage (Volts)
- Drain Source Voltage (Volts)
DS(on)
0 20 40 60 80
T-Temperature (C°)
V
4
4
and V
GS=
10V
TYPICAL CHARACTERISTICS
V
DS=
I
GS(th)
D=-
9V
6
6
10V
0.5A
100
vs Temperature
8
8
120
140 160
10
10
8V
4V
3V
7V
6V
5V
3 - 394
10
8
6
0
4
2
10
5
1
180
160
On-resistance vs gate-source voltage
200
140
120
100
80
60
40
20
0
1
Voltage Saturation Characteristics
0
Transconductance v drain current
0 0.1 0.2
V
V
GS
GS
2
-Gate Source Voltage (Volts)
-Gate Source Voltage (Volts)
I
D(on)
0.3
4
- Drain Current (Amps)
0.4 0.5 0.6
V
DS=
6
18V
0.7 0.8 0.9 1.0
10
8
10
20
I
1A
0.5A
0.25A
D=
I
1A
0.25A
0.5A
D=