ZVN3306FTA Diodes Zetex, ZVN3306FTA Datasheet

MOSFET N-CH 60V 150MA SOT23-3

ZVN3306FTA

Manufacturer Part Number
ZVN3306FTA
Description
MOSFET N-CH 60V 150MA SOT23-3
Manufacturer
Diodes Zetex
Type
Small Signalr
Datasheet

Specifications of ZVN3306FTA

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
150mA
Vgs(th) (max) @ Id
2.4V @ 1mA
Input Capacitance (ciss) @ Vds
35pF @ 18V
Power - Max
330mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
5Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±20V
Continuous Drain Current
150mA
Power Dissipation
330mW
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Compliant
Other names
MC
ZVN3306FTR

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SOT23 N-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 – JANUARY 1996
FEATURES
*
*
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
ABSOLUTE MAXIMUM RATINGS.
ELECTRICAL CHARACTERISTICS (at T
(1) Measured under pulsed conditions. Width=300 s. Duty cycle 2% (2) Sample test.
(3) Switching times measured with 50
Spice parameter data is available upon request for this device
PARAMETER
Drain-Source Voltage
Continuous Drain Current at T
Pulsed Drain Current
Gate-Source Voltage
Power Dissipation at T
Operating and Storage Temperature Range
PARAMETER
Drain-Source
Breakdown Voltage
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage
Drain Current
On-State Drain Current(1)
Static Drain-Source On-State
Resistance (1)
Forward Transconductance
(1)(2)
Input Capacitance (2)
Common Source
Output Capacitance (2)
Reverse Transfer Capacitance
(2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
R
60 Volt V
DS(on)
= 5
DS
amb
=25°C
ZVP3306F
MC
amb
t
t
SYMBOL MIN.
BV
V
I
I
I
R
g
C
C
C
t
t
GSS
DSS
D(on)
d(on)
r
d(off)
f
fs
=25°C
GS(th)
DS(on)
iss
oss
rss
DSS
source impedance and <5ns rise time on a pulse generator
60
0.8
750
150
3 typ
4 typ
4 typ
5 typ
3 - 393
amb
SYMBOL
V
I
I
V
P
T
D
DM
tot
j
DS
GS
:T
= 25°C unless otherwise stated).
MAX. UNIT CONDITIONS.
2.4
20
0.5
50
5
35
25
8
5
7
6
8
stg
V
V
nA
mA
mS
pF
pF
pF
ns
ns
ns
ns
A
A
I
I
V
V
V
V
V
V
V
V
D
D
GS
DS
DS
DS
GS
DS
DS
DD
=1mA, V
=1mA, V
-55 to +150
=60V, V
=48V, V
=18V, V
=18V, I
=18V, V
= 20V, V
=10V, I
VALUE
18V, I
150
330
60
ZVN3306F
3
20
D
GS
DS
D
D
GS
GS
GS
GS
D
=500mA
=500mA
=0V
= V
=500mA
DS
=0V
=0V, T=125°C
=10V
=0V, f=1MHz
SOT23
=0V
GS
UNIT
mW
mA
°C
V
A
V
G
S
(2)

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ZVN3306FTA Summary of contents

Page 1

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 – JANUARY 1996 FEATURES * DS(on Volt V DS COMPLEMENTARY TYPE - PARTMARKING DETAIL - ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at T ...

Page 2

ZVN3306F TYPICAL CHARACTERISTICS V 10V 9V GS= 1.0 0.8 0.6 0.4 0 Drain Source Voltage (Volts) DS Saturation Characteristics 1.0 V 10V DS= 0.8 0.6 0.4 0 ...

Page 3

TYPICAL CHARACTERISTICS 200 180 160 140 120 V 18V DS= 100 -Gate Source Voltage (Volts) GS Transconductance v gate-source voltage V =20V 30V 50V ...

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