ZXMN3B01FTA Diodes Zetex, ZXMN3B01FTA Datasheet
Home Discrete Semiconductor Products MOSFETs, GaNFETs - Single ZXMN3B01FTA
Manufacturer Part Number
ZXMN3B01FTA
Description
MOSFET N-CHAN 30V 2A SOT23-3
Manufacturer
Diodes Zetex
Specifications of ZXMN3B01FTA
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
150 mOhm @ 1.7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
700mV @ 250µA
Gate Charge (qg) @ Vgs
2.93nC @ 4.5V
Input Capacitance (ciss) @ Vds
258pF @ 15V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Manufacturer:
ZETEX/DIODES
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
SUMMARY
DESCRIPTION
This new generation of Trench MOSFETs from Zetex utilizes a unique structure that
combines the benefits of low on-resistance with fast switching speed. This makes
them ideal for high efficiency, low voltage, power management applications.
FEATURES
•
•
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APPLICATIONS
•
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ORDERING INFORMATION
DEVICE MARKING
•
ISSUE 1 - DECEMBER 2005
V
DEVICE
ZXMN3B01FTA
ZXMN3B01FTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
DC-DC Converters
Power Management functions
Disconnect switches
Motor control
3B1
=30V : R
DS(on)
REEL
SIZE
13”
7”
=0.15 ; I
WIDTH
TAPE
8mm
8mm
D
=2A
10000 units
QUANTITY
3000 units
PER REEL
1
ZXMN3B01F
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ZXMN3B01FTA Summary of contents
... APPLICATIONS • DC-DC Converters • Power Management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN3B01FTA 7” 8mm ZXMN3B01FTC 13” 8mm DEVICE MARKING • 3B1 ISSUE 1 - DECEMBER 2005 =2A D QUANTITY PER REEL 3000 units 10000 units ...
ZXMN3B01F ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ V =4.5V =4.5V =4.5V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body ...
ISSUE 1 - DECEMBER 2005 TYPICAL CHARACTERISTICS 3 ZXMN3B01F ...
ZXMN3B01F ELECTRICAL CHARACTERISTICS (at T PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (1) (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) ...
ISSUE 1 - DECEMBER 2005 CHARACTERISTICS 5 ZXMN3B01F ...
ZXMN3B01F Charge Basic gate charge waveform V DS 90% 10 d(on) r d(off) t (on) Switching time waveforms ...
PACKAGE OUTLINE Controlling dimensions are in millimetres. Approximate conversions are given in inches PACKAGE DIMENSIONS MILLIMETERS INCHES DIM MIN MAX MIN MAX A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C 1.10 0.043 D 0.37 0.53 0.015 0.021 ...
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