SI2301BDS-T1-E3 Vishay, SI2301BDS-T1-E3 Datasheet

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SI2301BDS-T1-E3

Manufacturer Part Number
SI2301BDS-T1-E3
Description
MOSFET P-CH 20V 2.2A SOT23-3
Manufacturer
Vishay
Type
Power MOSFETr

Specifications of SI2301BDS-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 2.8A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
950mV @ 250µA
Gate Charge (qg) @ Vgs
10nC @ 4.5V
Input Capacitance (ciss) @ Vds
375pF @ 6V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.1 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2.2 A
Power Dissipation
700 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-2.2A
Drain Source Voltage Vds
-20V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-950mV
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.1Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±8V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
SOT-23
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI2301BDS-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI2301BDS-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
38 046
Part Number:
SI2301BDS-T1-E3
Manufacturer:
VISHAY
Quantity:
8 000
Part Number:
SI2301BDS-T1-E3
Manufacturer:
ST
0
Part Number:
SI2301BDS-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI2301BDS-T1-E3
0
Company:
Part Number:
SI2301BDS-T1-E3
Quantity:
120 000
Company:
Part Number:
SI2301BDS-T1-E3
Quantity:
1 866
Company:
Part Number:
SI2301BDS-T1-E3
Quantity:
1 866
Company:
Part Number:
SI2301BDS-T1-E3
Quantity:
70 000
Notes:
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 board, t ≤ 5 s.
c. Surface Mounted on FR4 board.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72066
S-80427-Rev. D, 03-Mar-08
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
V
DS
- 20
(V)
b
0.100 at V
0.150 at V
a
R
DS(on)
J
= 150 °C)
GS
GS
b
c
= - 4.5 V
= - 2.5 V
(Ω)
Ordering Information: Si2301BDS-T1
P-Channel 2.5-V (G-S) MOSFET
b
b
G
S
A
1
2
I
D
Si2301 BDS (L1)*
= 25 °C, unless otherwise noted
- 2.4
- 2.0
* Marking Code
(A)
Si2301BDS-T1-E3 (Lead (Pb)-free)
Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
T
T
T
T
(SOT-23)
Top View
TO-236
A
A
A
A
b
= 25 °C
= 70 °C
= 25 °C
= 70 °C
3
FEATURES
D
• Halogen-free Option Available
Symbol
Symbol
T
R
J
V
V
I
P
, T
DM
thJA
I
I
GS
DS
D
S
D
stg
Typical
- 0.72
- 2.4
- 1.9
0.57
120
140
5 s
0.9
- 55 to 150
- 20
- 10
± 8
Steady State
Maximum
- 2.2
- 1.8
- 0.6
0.45
145
175
0.7
Vishay Siliconix
Si2301BDS
www.vishay.com
°C/W
Unit
Unit
°C
RoHS*
W
COMPLIANT
V
A
Available
Pb-free
1

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SI2301BDS-T1-E3 Summary of contents

Page 1

... Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 72066 S-80427-Rev. D, 03-Mar-08 FEATURES • Halogen-free Option Available 2.4 - 2.0 TO-236 (SOT-23 Top View Si2301 BDS (L1)* * Marking Code Si2301BDS-T1-E3 (Lead (Pb)-free) Si2301BDS-T1-GE3 (Lead (Pb)-free and Halogen-free °C, unless otherwise noted A Symbol ° ° ° ...

Page 2

... Si2301BDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...

Page 3

... Drain Current (A) D On-Resistance vs. Drain Current 2 Total Gate Charge (nC) g Gate Charge Document Number: 72066 S-80427-Rev. D, 03-Mar Si2301BDS Vishay Siliconix ° ° 0.0 0.5 1.0 1.5 2 Gate-to-Source Voltage (V) GS Transfer Characteristics 800 600 C iss 400 200 C oss C rss Drain-to-Source Voltage (V) DS Capacitance 1 ...

Page 4

... Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 150 ° 0.1 0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage 0.4 0.3 0 250 µA D 0.1 0.0 - 0 Temperature (°C) J Threshold Voltage www.vishay.com 4 0.6 0.5 0.4 0 °C J 0.2 0.1 0.0 0.8 1 ...

Page 5

... Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72066. Document Number: 72066 S-80427-Rev. D, 03-Mar- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si2301BDS Vishay Siliconix Notes ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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