ZXMN6A07FTC Diodes Zetex, ZXMN6A07FTC Datasheet

MOSFET N-CHAN 60V SOT23-3

ZXMN6A07FTC

Manufacturer Part Number
ZXMN6A07FTC
Description
MOSFET N-CHAN 60V SOT23-3
Manufacturer
Diodes Zetex
Datasheet

Specifications of ZXMN6A07FTC

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1.8A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
1.2A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 10V
Input Capacitance (ciss) @ Vds
166pF @ 40V
Power - Max
625mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A07FTC
Manufacturer:
ZETEX
Quantity:
45 000
Part Number:
ZXMN6A07FTC
Manufacturer:
ZETEX
Quantity:
20 000
ZXMN6A07F
60V SOT23 N-channel enhancement mode mosfet
Summary
Description
This new generation trench MOSFET from Zetex utilizes a unique
structure combining the benefits of low on-state resistance with fast
switching speed.
Features
Applications
Ordering information
Device marking
7N6
Issue 6 - January 2007
© Zetex Semiconductors plc 2007
Device
ZXMN6A07FTA
V
Low on-resistance
Fast switching speed
Low threshold
SOT23 package
DC-DC converters
Power management functions
Relay and solenoid driving
Motor control
(BR)DSS
60
0.350 @ V
0.250 @ V
R
DS(on)
Reel size
(inches)
GS
GS
( )
7
= 4.5V
= 10V
Tape width
(mm)
8
I
D
1.4
1.2
(A)
1
Quantity per
3,000
reel
D
www.zetex.com
G
Top view
S
D
G
S

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ZXMN6A07FTC Summary of contents

Page 1

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary (BR)DSS DS(on) 0.250 @ V = 10V GS 60 0.350 @ V = 4.5V GS Description This new generation trench MOSFET from Zetex utilizes a unique structure combining ...

Page 2

Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...

Page 3

Thermal characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A07F 3 www.zetex.com ...

Page 4

Electrical characteristics (at T Parameter Static Drain-source breakdown voltage Zero gate voltage drain current I Gate-body leakage Gate-source threshold voltage V Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) ...

Page 5

Typical characteristics Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A07F 5 www.zetex.com ...

Page 6

Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 6 - January 2007 © Zetex Semiconductors plc 2007 ...

Page 7

Package outline - SOT23 leads Dim. Millimeters Min. Max 1.12 A1 0.01 0.10 b 0.30 0.50 C 0.085 0.120 D 2.80 3.04 e 0.95 NOM Note: Controlling dimensions are in millimeters. ...

Page 8

Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...

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