ZXMN6A08E6 Diodes Inc, ZXMN6A08E6 Datasheet

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ZXMN6A08E6

Manufacturer Part Number
ZXMN6A08E6
Description
MOSFET, N CH, 60V, 3.5A, SOT-23
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN6A08E6

Transistor Polarity
N Channel
Continuous Drain Current Id
3.5A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
1.7W
No. Of Pins
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A08E6
Manufacturer:
ZETEX
Quantity:
20 000
Part Number:
ZXMN6A08E6TA
Manufacturer:
ZETEX
Quantity:
42 000
Part Number:
ZXMN6A08E6TA
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
ZXMN6A08E6TC
Manufacturer:
ZETEX
Quantity:
39 000
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
DESCRIPTION
This new generation trench MOSFET from Zetex features a unique structure
combining the benefits of low on-resistance and fast switching, making it ideal for
high efficiency power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 4 - MAY 2006
DEVICE
ZXMN6A08E6TA
ZXMN6A08E6TC
V
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
DC - DC converters
Power management functions
Disconnect switches
Motor control
6A8
(BR)DSS
60
0.150 @ V
0.080 @ V
R
DS(on)
REEL
SIZE
13”
7”
GS
GS
( )
= 4.5V
= 10V
WIDTH
TAPE
8mm
8mm
10000 units
QUANTITY
I
3000 units
PER REEL
D
3.5
2.5
(A)
1
ZXMN6A08E6
PINOUT
Top View

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ZXMN6A08E6 Summary of contents

Page 1

... Power management functions • Disconnect switches • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN6A08E6TA 7” 8mm ZXMN6A08E6TC 13” 8mm DEVICE MARKING • 6A8 ISSUE 4 - MAY 2006 I (A) D 3.5 2.5 QUANTITY PER REEL 3000 units 10000 units 1 ZXMN6A08E6 PINOUT Top View ...

Page 2

... ZXMN6A08E6 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate Source Voltage Continuous Drain Current V GS =10V =25°C ( =10V =70°C ( =10V =25°C (a) Pulsed Drain Current (c) Continuous Source Current (Body Diode) (b) Pulsed Source Current (Body Diode) (c) Power Dissipation =25°C (a) Linear Derating Factor Power Dissipation =25°C (b) ...

Page 3

... ISSUE 4 - MAY 2006 CHARACTERISTICS 3 ZXMN6A08E6 ...

Page 4

... ZXMN6A08E6 ELECTRICAL CHARACTERISTICS PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING(2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time ...

Page 5

... ISSUE 4 - MAY 2006 TYPICAL CHARACTERISTICS 5 ZXMN6A08E6 ...

Page 6

... ZXMN6A08E6 TYPICAL CHARACTERISTICS 6 ISSUE 4 - MAY 2006 ...

Page 7

... Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN6A08E6 Max 0.118 0.069 0.002 10° Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL ...

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