MTP50P03HDLG ON Semiconductor, MTP50P03HDLG Datasheet
MTP50P03HDLG
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MTP50P03HDLG Summary of contents
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... J stg 150 E 1250 mJ AS °C/W R 1.0 qJC 62.5 R qJA °C T 260 L MTP50P03HDL MTP50P03HDLG Preferred devices are recommended choices for future use and best overall value. 1 http://onsemi.com 50 AMPERES, 30 VOLTS DS(on) P−Channel MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain 4 TO−220AB CASE 221A ...
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ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...
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TYPICAL ELECTRICAL CHARACTERISTICS 100 T = 25° 0.2 0.4 0.6 0.8 1.0 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.029 ...
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Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...
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... RR Compared to ON Semiconductor standard cell density low voltage MOSFETs, high cell density MOSFET diodes are faster (shorter t reverse recovery characteristic. The softness advantage of the high cell density diode means they can be forced through ...
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The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...
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D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E−04 1.0E− Figure 15. Diode Reverse Recovery Waveform MTP50P03HDL P 0.1 (pk DUTY CYCLE 1.0E−02 ...
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... Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...