IRF1010NSTRLPBF International Rectifier, IRF1010NSTRLPBF Datasheet - Page 6

• Manufacturer Part Number: IRF1010NSTRLPBF
• Description: MOSFET N-CH 55V 85A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF1010NSTRLPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 43A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 85A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 3210pF @ 25V
• Power - Max: 180W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 3.8 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 80 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF1010NSTRLPBF; IRF1010NSTRLPBFTR

6
GS
V
I
G
AS
Q
R G
20V
GS
V
V DS
GS
t p
I AS
Charge
Q
Q
D.U.T
GD
G
t p
0.01 Ω
L
15V
V
(BR)DSS
DRIVER
+
-
V DD
A
500
400
300
200
100
0
25
Starting T , Junction Temperature ( C)
50
12V
V
GS
J
Same Type as D.U.T.
75
Current Regulator
.2µF
100
50KΩ
3mA
Current Sampling Resistors
.3µF
I
125
G
TOP
BOTTOM
www.irf.com
D.U.T.
150
I
D
°
I D
18A
30A
43A
175
+
-
V
DS