IRF1010NSTRLPBF International Rectifier, IRF1010NSTRLPBF Datasheet - Page 11
IRF1010NSTRLPBF
Manufacturer Part Number
IRF1010NSTRLPBF
Description
MOSFET N-CH 55V 85A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF1010NSTRLPBF.pdf
(11 pages)
Specifications of IRF1010NSTRLPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 43A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
85A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
120nC @ 10V
Input Capacitance (ciss) @ Vds
3210pF @ 25V
Power - Max
180W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
84 A
Power Dissipation
3.8 W
Mounting Style
SMD/SMT
Gate Charge Qg
80 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF1010NSTRLPBF
IRF1010NSTRLPBFTR
IRF1010NSTRLPBFTR
Available stocks
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/