SI2343DS-T1-E3 Vishay, SI2343DS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2343DS-T1-E3
• Description: MOSFET P-CH 30V 3.1A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2343DS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.053 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 53mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2343DS-T1-E3TR

Si2343DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
20
10
0.6
0.4
0.2
0.0
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
0.4
T
Threshold Voltage
J
- Source-to-Drain Voltage (V)
T
I
= 150 °C
D
J
= 250 µA
- Temperature (°C)
25
0.6
50
0.8
75
T
J
0.01
1.0
= 25 °C
100
0.1
10
100
1
0.1
Limited by R
* V
1.2
125
Limited
GS
I
D(on)
Single Pulse
T
> minimum V
A
V
= 25 °C
150
DS
1.4
DS(on)
Safe Operating Area
- Drain-to-Source Voltage (V)
1
*
GS
BVDSS Limited
at which R
I
DM
10
DS(on)
0.12
0.10
0.08
0.06
0.04
0.02
0.00
Limited
12
10
8
6
4
2
0
0.01
0
is specified
On-Resistance vs. Gate-to-Source Voltage
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
0.1
2
V
100
I
D
GS
= 1 A
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
I
Time (s)
D
S09-0133-Rev. B, 02-Feb-09
= 4.0 A
Document Number: 72079
6
10
T
A
= 25 °C
8
100
600
10