SI2343DS-T1-E3 Vishay, SI2343DS-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI2343DS-T1-E3
• Description: MOSFET P-CH 30V 3.1A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2343DS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 53 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.053 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -4A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 53mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2343DS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72079
S09-0133-Rev. B, 02-Feb-09
V
GS
= 10 thru 5 V
0.12
0.10
0.08
0.06
0.04
0.02
0.00
10
15
12
9
6
3
0
8
6
4
2
0
0
0
0
V
I
D
DS
On-Resistance vs. Drain Current
= 4.0 A
=15 V
1
V
3
3
DS
Output Characteristics
V
Q
- Drain-to-Source Voltage (V)
GS
g
I
D
- Total Gate Charge (nC)
= 4.5 V
Gate Charge
- Drain Current (A)
6
2
6
3
9
9
V
GS
= 10 V
12
12
4
4 V
3 V
15
15
5
1000
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
15
12
9
6
3
0
0
- 50
0.0
0
On-Resistance vs. Junction Temperature
C
- 25
0.5
V
I
rss
D
GS
= 4.0 A
5
= 4.0 V
V
C
V
DS
1.0
oss
Transfer Characteristics
GS
0
T
J
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
10
1.5
25
Capacitance
C
iss
25 °C
T
2.0
15
50
C
Vishay Siliconix
= 125 °C
2.5
75
Si2343DS
20
www.vishay.com
100
3.0
- 55 °C
25
125
3.5
150
4.0
30
3