SPB08P06P G Infineon Technologies, SPB08P06P G Datasheet

SPB08P06P G

Manufacturer Part Number

SPB08P06P G

Description

MOSFET P-CH 60V 8.8A TO-263

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.SPB08P06P_G.pdf (8 pages)

Specifications of SPB08P06P G

Package / Case

D²Pak, TO-263 (2 leads + tab)

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

300 mOhm @ 6.2A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

8.8A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

13nC @ 10V

Input Capacitance (ciss) @ Vds

420pF @ 25V

Power - Max

42W

Mounting Type

Surface Mount

Minimum Operating Temperature

- 55 C

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

0.3 Ohm @ 10 V

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

8.8 A

Power Dissipation

42000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package

D2PAK (TO-263)

Vds (max)

-60.0 V

Rds (on) (max) (@10v)

230.0 mOhm

Rds (on) (max) (@4.5v)

Rds (on) (max) (@2.5v)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SP000102179
SPB08P06P G
SPB08P06PGINTR
SPB08P06PGXT

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Rev 1.5

SPB08P06PG PG-TO263-3

Features

• P-Channel

• Enhancement mode

• Avalanche rated

• dv /dt rated

• 175°C operating temperature

• Pb-free lead finishing; RoHS compliant

Maximum ratings, at T

Parameter

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

Reverse diode dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

ESD class

Soldering temperature

IEC climatic category; DIN IEC 68-1

SIPMOS

Type

Power-Transistor

Package

=25 °C, unless otherwise specified

Tape and reel information

1000 pcs / reel

Symbol Conditions

dv /dt

D,pulse

tot

, T

stg

di /dt =-200 A/µs,

page 1

j,max

=8.83 A, R

=8.83 A, V

=25 °C

=100 °C

=25 °C

=175 °C

Product Summary

=48 V,

=25 Ω

DS(on),max

Marking

08P06P

PG-TO263-3

Lead free

Yes

steady state

"-55 ... +175"

55/150/56

260 °C

-35.32

Value

-8.8

-6.3

±20

-6

SPB08P06P G

Packing

Non dry

-8.8

0.3

-60

Unit

kV/µs

°C

Ω

2008-07-09

Related parts for SPB08P06P G

SPB08P06P G Summary of contents

Page 1

... D,pulse A =25 Ω =8. =8. = /dt di /dt =-200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Lead free Packing Yes Non dry Value Unit steady state -8.8 A -6.3 -35. kV/µs ± "-55 ... +175" °C 260 °C 55/150/56 ...

Page 2

... I =-250 µA GS(th =- DSS T =25 ° =- =150 ° =- GSS =- =-6.2 A DS(on |>2 DS(on)max =-6 (one layer, 70µm thick) copper area for drain connection. page 2 SPB08P06P G Values Unit min. typ. max 3 -0.1 -1 µA - -10 -100 - -10 -100 nA - 221 300 mΩ , 2.4 4 2008-07-09 ...

Page 3

... Reverse recovery time Reverse recovery charge Rev 1.5 Symbol Conditions C iss =- oss f =1 MHz C rss t d(on =-6 Ω R d(off =- =-8 - plateau =25 ° S,pulse =-8. =25 ° = =| /dt =100 A/µ page 3 SPB08P06P G Values Unit min. typ. max. - 335 420 pF - 105 135 - -1.9 -2 - -35 -1. 100 150 nC 2008-07-09 ...

Page 4

... parameter limited by on-state resistance Rev 1.5 2 Drain current I =f 120 160 [° Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ 100 [V] DS page 4 SPB08P06P G |≥ 120 160 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [ 2008-07-09 ...

Page 5

... DS(on)max parameter Rev 1.5 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 1000 900 800 - 700 600 500 -6 V 400 300 -5.5 V 200 -5 V -4.5 V 100 - [ Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 SPB08P06P =25 ° -4 -5 -37V - [A] D =25 ° [ 2008-07-09 ...

Page 6

... Forward characteristics of reverse diode I =f parameter Ciss 0 10 Coss -1 10 Crss - [V] DS page 6 SPB08P06P =-250 µ max. typ. min. - 100 140 T [° 175 °C, typ 25 °C, 98% 175 °C, 98% 25 °C, typ 0.5 1 1.5 2 2.5 -V [V] SD 180 ...

Page 7

... Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS -80 - Rev 1.5 14 Typ. gate charge V =f(Q GS parameter °C 12 100 °C 10 125 ° [µ Gate charge waveforms 80 120 160 200 [°C] j page 7 SPB08P06P =-8.8 A pulsed gate [nC] gate 15 2008-07-09 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 ). (www.infineon.com page 8 SPB08P06P G 2008-07-09 ...

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