SPB08P06P G Infineon Technologies, SPB08P06P G Datasheet
SPB08P06P G
Specifications of SPB08P06P G
SPB08P06P G
SPB08P06PGINTR
SPB08P06PGXT
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SPB08P06P G Summary of contents
Page 1
... D,pulse A =25 Ω =8. =8. = /dt di /dt =-200 A/µs, T =175 °C j,max =25 °C tot stg page 1 SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Lead free Packing Yes Non dry Value Unit steady state -8.8 A -6.3 -35. kV/µs ± "-55 ... +175" °C 260 °C 55/150/56 ...
Page 2
... I =-250 µA GS(th =- DSS T =25 ° =- =150 ° =- GSS =- =-6.2 A DS(on |>2 DS(on)max =-6 (one layer, 70µm thick) copper area for drain connection. page 2 SPB08P06P G Values Unit min. typ. max 3 -0.1 -1 µA - -10 -100 - -10 -100 nA - 221 300 mΩ , 2.4 4 2008-07-09 ...
Page 3
... Reverse recovery time Reverse recovery charge Rev 1.5 Symbol Conditions C iss =- oss f =1 MHz C rss t d(on =-6 Ω R d(off =- =-8 - plateau =25 ° S,pulse =-8. =25 ° = =| /dt =100 A/µ page 3 SPB08P06P G Values Unit min. typ. max. - 335 420 pF - 105 135 - -1.9 -2 - -35 -1. 100 150 nC 2008-07-09 ...
Page 4
... parameter limited by on-state resistance Rev 1.5 2 Drain current I =f 120 160 [° Max. transient thermal impedance Z =f(t thJA p parameter µs 100 µ 100 [V] DS page 4 SPB08P06P G |≥ 120 160 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [ 2008-07-09 ...
Page 5
... DS(on)max parameter Rev 1.5 6 Typ. drain-source on resistance R =f(I DS(on) parameter: V 1000 900 800 - 700 600 500 -6 V 400 300 -5.5 V 200 -5 V -4.5 V 100 - [ Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 SPB08P06P =25 ° -4 -5 -37V - [A] D =25 ° [ 2008-07-09 ...
Page 6
... Forward characteristics of reverse diode I =f parameter Ciss 0 10 Coss -1 10 Crss - [V] DS page 6 SPB08P06P =-250 µ max. typ. min. - 100 140 T [° 175 °C, typ 25 °C, 98% 175 °C, 98% 25 °C, typ 0.5 1 1.5 2 2.5 -V [V] SD 180 ...
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... Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS -80 - Rev 1.5 14 Typ. gate charge V =f(Q GS parameter °C 12 100 °C 10 125 ° [µ Gate charge waveforms 80 120 160 200 [°C] j page 7 SPB08P06P =-8.8 A pulsed gate [nC] gate 15 2008-07-09 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 ). (www.infineon.com page 8 SPB08P06P G 2008-07-09 ...