IPP45N06S3L-13 Infineon Technologies, IPP45N06S3L-13 Datasheet
IPP45N06S3L-13
Specifications of IPP45N06S3L-13
IPP45N06S3L-13IN
IPP45N06S3L13X
IPP45N06S3L13XK
SP000102215
Related parts for IPP45N06S3L-13
IPP45N06S3L-13 Summary of contents
Page 1
... Rev. 1.1 Product Summary PG-TO263-3-2 Marking 3N06L13 3N06L13 3N06L13 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =22 =25 °C tot stg page 1 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 DS (SMD version) DS(on),max D PG-TO262-3-1 PG-TO220-3-1 Value = 180 145 45 ±16 65 -55 ... +175 55/175/ 13 Unit °C 2007-11-07 ...
Page 2
... (BR)DSS =30 µA GS(th = DSS T =25 ° = =125 ° = GSS =17 A DS(on = SMD version SMD version page 2 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Values min. typ. max 2 1.2 1 100 = 100 - 20.4 25.1 - 20.1 24.8 - 11.4 13.4 - 11.1 13.1 Unit K µ 2007-11-07 ...
Page 3
... = = plateau =25 ° S,pulse = =25 ° =27 /dt =100 A/µ 2.3 K/W the chip is able to carry 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L-13 Values min. typ. max. - 3600 = 450 - 430 - 124 - 4 0.6 0 Unit - ...
Page 4
... parameter 1000 100 Rev. 1.1 2 Drain current 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L- ≥ 100 150 T [° 0.5 0.1 0.05 single pulse - [s] p 200 - 2007-11-07 ...
Page 5
... V 100 5 4 Typ. transfer characteristics parameter 100 Rev. 1.1 6 Typ. drain-source on resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 25 -55 ° °C 15 175 ° [V] page 5 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L- ° 4 [ -60 - 100 T [° 140 180 2007-11-07 ...
Page 6
... V SD Rev. 1.1 10 Typ. capacitances 300µ 100 140 180 12 Typ. avalanche characteristics parameter: T 100 10 25 °C 1 0.8 1 1.2 1.4 [V] page 6 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L- MHz DS GS Ciss Coss Crss [ j(start) 150°C 25°C 100°C 0 100 t [µ 1000 2007-11-07 ...
Page 7
... Typical avalanche energy parameter 300 11.25 A 250 200 22.5 A 150 100 100 T [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 150 200 16 Gate charge waveforms [nC] page 7 IPB45N06S3L-13 IPI45N06S3L-13, IPP45N06S3L- -60 - 100 T [° 140 180 gat 2007-11-07 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI45N06S3L-13, IPP45N06S3L-13 page 8 IPB45N06S3L-13 2007-11-07 ...
Page 9
... Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.1 Data Sheet 2.2 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Data Sheet 1.1 Rev. 1.1 IPI45N06S3L-13, IPP45N06S3L-13 Date 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 15.12.2006 06.09.2007 07 ...