AOD409 Alpha & Omega Semiconductor Inc, AOD409 Datasheet - Page 4

• Manufacturer Part Number: AOD409
• Description: MOSFET P-CH -60V -26A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 30V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1103-2

AOD409/AOI409
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100.0
10
10.0
8
6
4
2
0
1.0
0.1
0.01
0.1
0
10
0.00001
0.1
1
V
I
D
R
limited
DS
=-20A
5
DS(ON)
Figure 9: Maximum Forward Biased Safe
T
=-30V
J(Max)
Figure 7: Gate-Charge Characteristics
10
=175°C, T
Single Pulse
Operating Area (Note F)
15
D=T
T
R
J,PK
0.0001
θJC
1
on
=2.5°C/W
=T
20
C
/T
=25°C
C
-Q
-V
+P
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
DS
g
25
10ms
DM
(nC)
(Volts)
.Z
θJC
30
.R
DC
0.001
θJC
10
35
1ms
100µs
40
10µs
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
45
0.01
50
Pulse Width (s)
100
4000
3600
3200
2800
2400
2000
1600
1200
1000
800
400
800
600
400
200
0.1
0
0.0001
0
0
Figure 10: Single Pulse Power Rating Junction-to-
C
oss
Figure 8: Capacitance Characteristics
0.001
5
P
D
1
T
10
on
Pulse Width (s)
C
0.01
Case (Note F)
iss
C
T
-V
rss
DS
15
(Volts)
0.1
10
T
T
J(Max)
C
20
=25°C
=175°C
1
25
100
10
30