AOD409 Alpha & Omega Semiconductor Inc, AOD409 Datasheet - Page 3

• Manufacturer Part Number: AOD409
• Description: MOSFET P-CH -60V -26A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD409

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 2.4V @ 250µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 30V
• Power - Max: 60W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1103-2

AOD409/AOI409
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
25
20
15
10
5
0
50
40
30
20
10
80
60
40
20
0
0
Figure 3: On-Resistance vs. Drain Current and Gate
0
2
-10V
Figure 5: On-Resistance vs. Gate-Source Voltage
Fig 1: On-Region Characteristics
1
5
4
-4.5V
25°C
-5V
125°C
2
10
-V
V
-6V
-V
GS
Voltage
DS
-I
GS
=-4.5V
D
(Volts)
(Volts)
(A)
6
15
3
V
GS
=-10V
I
D
8
=-20A
V
20
GS
4
-3.5V
=-3V
-4V
25
10
5
30
25
20
15
10
1.8
1.6
1.4
1.2
0.8
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
1.0E-06
5
0
2
1
0
0
Figure 4: On-Resistance vs. Junction Temperature
0.0
25
Figure 2: Transfer Characteristics
1
Figure 6: Body-Diode Characteristics
V
0.2
DS
50
125°C
=-5V
Temperature (°C)
2
0.4
-V
75
V
I
GS
D
GS
=-20A
-V
(Volts)
125°C
=-10V
SD
100
0.6
(Volts)
3
25°C
125
0.8
V
I
D
GS
=-20A
25°C
=-4.5V
4
150
1.0
175
5
1.2