STS1HNK60 STMicroelectronics, STS1HNK60 Datasheet - Page 7

• Manufacturer Part Number: STS1HNK60
• Description: MOSFET N-CH 600V 300MA 8-SOIC
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STS1HNK60

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 300mA
• Vgs(th) (max) @ Id: 3.7V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 156pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3530-2

DIM.
a1
a2
a3
b1
c1
e3
M
C
D
A
b
E
e
F
L
S
MIN.
0.65
0.35
0.19
0.25
0.1
4.8
5.8
3.8
0.4
SO-8 MECHANICAL DATA
TYP.
1.27
3.81
mm
MAX.
1.75
0.25
1.65
0.85
0.48
0.25
1.27
0.5
5.0
6.2
4.0
0.6
45 (typ.)
8 (max.)
0.003
0.025
0.013
0.007
0.010
0.188
0.228
0.015
MIN.
0.14
0.050
0.150
TYP.
inch
0016023
STS1HNK60
MAX.
0.068
0.009
0.064
0.033
0.018
0.010
0.019
0.196
0.244
0.157
0.050
0.023
7/8