NTGS3455T1G ON Semiconductor, NTGS3455T1G Datasheet - Page 3
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NTGS3455T1G
Manufacturer Part Number
NTGS3455T1G
Description
MOSFET P-CH 30V 2.5A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet
1.NTGS3455T1G.pdf
(5 pages)
Specifications of NTGS3455T1G
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
480pF @ 5V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS3455T1GOS
NTGS3455T1GOS
NTGS3455T1GOSTR
NTGS3455T1GOS
NTGS3455T1GOSTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTGS3455T1G
Manufacturer:
ONSemico
Quantity:
85 000
Company:
Part Number:
NTGS3455T1G
Manufacturer:
ON Semiconductor
Quantity:
42
Company:
Part Number:
NTGS3455T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTGS3455T1G
Manufacturer:
ON/安森美
Quantity:
20 000
0.25
0.15
0.05
0.3
0.2
0.1
1.6
1.4
1.2
0.8
0.6
16
20
12
8
4
0
−50
0
1
0
2
V
Figure 3. On−Resistance vs. Gate−to−Source
GS
−V
V
V
I
V
−V
−25
D
Figure 5. On−Resistance Variation with
0.5
GS
GS
GS
= −7 V
DS,
Figure 1. On−Region Characteristics
3
= −3.5 A
GS,
= −8 V
= −9 V
= −10 V
T
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
J
, JUNCTION TEMPERATURE (°C)
1
4
0
V
GS
= −10 V
T
1.5
25
J
5
Temperature
= 25°C
Voltage
50
6
2
2.5
75
7
100
8
3
V
V
V
V
I
T
GS
D
GS
GS
GS
J
= −3.5 A
= 25°C
= −6 V
= −3 V
125
= −5 V
3.5
= −4 V
http://onsemi.com
9
10
150
4
3
−100
0.25
0.15
0.05
700
500
300
100
0.3
0.2
0.1
20
18
16
14
12
10
8
6
4
2
0
0
0
0
0
Figure 4. On−Resistance vs. Drain Current and
V
−V
−V
2
GS
DS,
1
GS,
Figure 2. Transfer Characteristics
= −4.5 V
5
Figure 6. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
GATE−TO−SOURCE VOLTAGE (VOLTS)
−I
D,
2
6
DRAIN CURRENT (AMPS)
10
C
C
C
Gate Voltage
oss
rss
iss
8
T
3
J
= 25°C
15
10
V
GS
T
4
J
= −10 V
12
= −55°C
20
14
5
V
T
T
T
GS
J
16
J
J
= 25°C
= 125°C
= 25°C
25
= 0 V
6
18
30
20
7