NTGS3455T1G ON Semiconductor, NTGS3455T1G Datasheet

MOSFET P-CH 30V 2.5A 6-TSOP

NTGS3455T1G

Manufacturer Part Number
NTGS3455T1G
Description
MOSFET P-CH 30V 2.5A 6-TSOP
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTGS3455T1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 3.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
480pF @ 5V
Power - Max
500mW
Mounting Type
Surface Mount
Package / Case
SC-74-6
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
6 S
Drain-source Breakdown Voltage
- 30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3.5 A
Power Dissipation
2 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTGS3455T1GOS
NTGS3455T1GOS
NTGS3455T1GOSTR

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Manufacturer:
ON Semiconductor
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Part Number:
NTGS3455T1G
0
NTGS3455T1
MOSFET
−3.5 Amps, −30 Volts
P−Channel TSOP−6
Features
Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
2. Mounted onto a 2″ square FR−4 board (1 in sq, 2 oz. Cu. 0.06″ thick single
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 3
Thermal Resistance
Total Power Dissipation @ T
Drain Current
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Thermal Resistance
Total Power Dissipation @ T
Drain Current
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Maximum Lead Temperature for Soldering
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Operating and Storage Temperature Range
Cellular and Cordless Telephones, and PCMCIA Cards
Ultra Low R
Higher Efficiency Extending Battery Life
Miniature TSOP−6 Surface Mount Package
Pb−Free Package is Available
Power Management in Portable and Battery−Powered Products, i.e.:
sided), t t 5.0 seconds.
sided), operating to steady state.
Junction−to−Ambient (Note 1)
− Continuous @ T
− Pulsed Drain Current (T
Junction−to−Ambient (Note 2)
− Continuous @ T
− Pulsed Drain Current (T
Purposes for 10 Seconds
DS(on)
Rating
A
A
= 25°C
= 25°C
(T
J
= 25°C unless otherwise noted.)
A
A
p
p
= 25°C
= 25°C
t 10 μS)
t 10 μS)
Symbol
T
V
R
R
J
V
I
I
P
P
P
P
, T
DSS
DM
DM
T
I
I
I
I
θJA
θJA
GS
D
D
D
D
d
d
d
d
L
stg
"20.0
−55 to
Value
−1.75
62.5
−3.5
−2.5
−2.5
−30
−20
128
−14
150
260
2.0
1.0
1.0
0.5
1
Watts
Amps
Amps
Watts
Amps
Watts
Amps
Amps
Watts
Amps
°C/W
°C/W
Volts
Volts
Unit
°C
°C
NTGS3455T1
NTGS3455T1G
†For information on tape and reel specifications,
V
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
(BR)DSS
−30 V
*Date Code orientation may vary depending
upon manufacturing location.
CASE 318G
Device
(Note: Microdot may be in either location)
STYLE 1
TSOP−6
GATE
455
M
G
ORDERING INFORMATION
1
100 mW @ −10 V
3
http://onsemi.com
R
= Specific Device Code
= Date Code*
= Pb−Free Package
DRAIN
DS(on)
(Pb−Free)
Package
TSOP−6
TSOP−6
SOURCE
P−Channel
4
MARKING DIAGRAM &
TYP
Publication Order Number:
1 2 5 6
PIN ASSIGNMENT
Drain
Drain
6
1
455 M G
3000 Tape & Reel
3000 Tape & Reel
Drain
Drain
G
NTGS3455T1/D
5
2
Shipping
I
Source
4
3
Gate
−3.5 A
D
Max

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NTGS3455T1G Summary of contents

Page 1

... J stg *Date Code orientation may vary depending 150 upon manufacturing location. T 260 °C L NTGS3455T1 NTGS3455T1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I Max ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( Vdc −10 μ Zero Gate Voltage Drain Current ( Vdc −30 Vdc 25° ...

Page 3

V = − − − − 25° 0.5 1 1.5 2 2.5 −V DRAIN−TO−SOURCE VOLTAGE (VOLTS) ...

Page 4

TOTAL GATE CHARGE (nC) g, Figure 7. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1 Duty ...

Page 5

... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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