NTGS3443T1G ON Semiconductor, NTGS3443T1G Datasheet - Page 4

• Manufacturer Part Number: NTGS3443T1G
• Description: MOSFET P-CH 20V 2.2A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3443T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 565pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3443T1GOSTR

1200
1000
800
600
400
200
0
1.3
1.2
1.1
0.9
0.8
0.7
0.6
0
1
−50
−V
2
Figure 9. Gate Threshold Voltage Variation
DS,
−25
Figure 7. Capacitance Variation
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
T
J,
JUNCTION TEMPERATURE (°C)
0
6
with Temperature
8
25
10
50
TYPICAL ELECTRICAL CHARACTERISTICS
I
D
12
= −250 mA
75
14
C
C
C
T
V
100
oss
rss
iss
16
J
GS
= 25°C
= 0 V
http://onsemi.com
18
125
20
150
4
5
4
3
2
1
0
4
3
2
1
0
0.3
0
Figure 10. Diode Forward Voltage vs. Current
Q1
V
Drain−to−Source Voltage vs. Total Charge
−V
GS
1
0.4
SD
= 0 V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 8. Gate−to−Source and
Q
2
g,
0.5
TOTAL GATE CHARGE (nC)
Q2
T
3
J
= 150°C
0.6
QT
4
0.7
5
V
GS
0.8
T
I
6
D
J
= −4.4 A
= 25°C
T
J
0.9
7
= 25°C
8
1