NTGS3443T1G ON Semiconductor, NTGS3443T1G Datasheet - Page 3

• Manufacturer Part Number: NTGS3443T1G
• Description: MOSFET P-CH 20V 2.2A 6-TSOP
• Manufacturer: ON Semiconductor

Specifications of NTGS3443T1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 565pF @ 5V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.065 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTGS3443T1GOSTR

0.35
0.25
0.15
0.05
0.4
0.3
0.2
0.1
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
8
6
4
2
0
−50
0
1
1.5
0
V
GS
Figure 3. On−Resistance vs. Gate−to−Source
−V
I
V
−V
−25
D
= −5 V
Figure 5. On−Resistance Variation with
GS
DS,
Figure 1. On−Region Characteristics
= −4.4 A
2
GS,
= −4.5 V
0.4
T
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GATE−TO−SOURCE VOLTAGE (VOLTS)
J
, JUNCTION TEMPERATURE (°C)
0
2.5
V
GS
25
V
Temperature
0.8
= −3.5 V
GS
V
3
Voltage
= −4 V
GS
50
V
= −4.5 V
GS
TYPICAL ELECTRICAL CHARACTERISTICS
3.5
= −3 V
V
1.2
GS
75
V
= −2.5 V
V
GS
GS
4
100
= −1.5 V
= −2 V
I
T
D
T
1.6
J
J
= −4.4 A
= 25°C
= 25°C
4.5
125
http://onsemi.com
150
2
5
3
0.01
0.16
0.14
0.12
0.08
0.06
0.04
100
0.1
0.1
10
8
6
4
2
0
1
0.6
0
0
Figure 4. On−Resistance vs. Drain Current and
Figure 6. Drain−to−Source Leakage Current
V
T
−V
−V
DS
J
1
= 25°C
DS,
≥ = −10 V
GS,
Figure 2. Transfer Characteristics
1
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
4
GATE−TO−SOURCE VOLTAGE (VOLTS)
T
−I
J
2
D,
= 125°C
T
J
DRAIN CURRENT (AMPS)
1.4
= 25°C
Gate Voltage
3
vs. Voltage
8
T
T
T
J
J
J
1.8
= 100°C
= 125°C
4
= 25°C
T
V
J
GS
12
= −55°C
5
= −2.5 V
2.2
V
V
6
GS
GS
V
16
GS
= −2.7 V
= −4.5 V
2.6
= 0 V
7
20
3
8