2SK3497(F) Toshiba, 2SK3497(F) Datasheet - Page 2

• Manufacturer Part Number: 2SK3497(F)
• Description: MOSFET N-CH 180V 10A SC-67
• Manufacturer: Toshiba

Specifications of 2SK3497(F)

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 180V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 2.1V @ 1mA
• Input Capacitance (ciss) @ Vds: 2400pF @ 30V
• Power - Max: 130W
• Mounting Type: Through Hole
• Package / Case: 2-16C1B (TO-247 N)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Rds On (max) @ Id, Vgs: -

Electrical Characteristics
Marking
Drain cut−off current
Gate leakage current
Drain−source breakdown voltage
Drain−source saturation voltage
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
This transistor is an electrostatic-sensitive device. Please handle with caution.
Characteristics
TOSHIBA
K3497
Part No. (or abbreviation code)
Lot No.
A line indicates
Lead (Pb)-Free
V
(Ta = 25°C)
V
Symbol
(BR) DSS
DS (ON)
I
I
C
|Y
C
C
GSS
DSS
V
oss
rss
iss
th
fs
|
V
V
I
V
V
V
V
D
DS
GS
GS
DS
DS
DS
= 10 mA, V
= 180V, V
= 10 V, I
= 10 V, I
= 30 V, V
= ±12 V, V
= 7 V, I
D
2
D
D
GS
GS
= 5 A
GS
Test Condition
= 1 mA
= 5 A
DS
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
180
Min
1.1
6.0
⎯
⎯
⎯
⎯
⎯
⎯
2400
Typ.
12.0
220
⎯
⎯
⎯
⎯
⎯
30
2009-01-27
2SK3497
0.75
Max
100
2.1
10
⎯
⎯
⎯
⎯
⎯
Unit
μA
μA
pF
V
V
V
S