IXFB80N50Q2 IXYS, IXFB80N50Q2 Datasheet - Page 2

• Manufacturer Part Number: IXFB80N50Q2
• Description: MOSFET N-CH 500V 80A PLUS264
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFB80N50Q2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 5.5V @ 8mA
• Gate Charge (qg) @ Vgs: 250nC @ 10V
• Input Capacitance (ciss) @ Vds: 15000pF @ 25V
• Power - Max: 960W
• Mounting Type: Through Hole
• Package / Case: 3-PLUS264™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.06 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 80 A
• Power Dissipation: 960 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 80
• Rds(on), Max, Tj=25°c, (?): 0.06
• Ciss, Typ, (pf): 15000
• Qg, Typ, (nc): 250
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 960
• Rthjc, Max, (ºc/w): 0.13
• Package Style: PLUS264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
S
SM
RM
d(on)
r
d(off)
f
rr
one or moreof the following U.S. patents:
fs
SD
iss
oss
rss
thJC
thCK
g(on)
gs
gd
RM
J
= 25°C, unless otherwise specified)
Test Conditions
V
V
Resistive Switching Times
V
R
V
Test Conditions
V
Repetitive;
pulse width limited by T
I
I
-di/dt = 100 A/μs
V
F
F
R
DS
GS
GS
GS
GS
G
= 25A, V
= I
= 100 V
= 1Ω (External)
= 0V, V
= 10V, V
= 10V, V
= 0V
S
= 10V, I
, V
GS
GS
= 0V, Note 1
DS
D
DS
DS
= 0V
= 25V, f = 1MHz
= 0.5 • I
= 0.5 • V
= 0.5 • V
4,850,072
4,881,106
D25
JM
DSS
DSS
, Note 1
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
(T
J
= 25°C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
D25
5,381,025
5,486,715
5,237,481
Min.
Min.
50
Characteristic Values
Characteristic Values
1610
0.13
Typ.
Typ.
300
250
120
1.4
6,162,665
6,259,123 B1
6,306,728 B1
12
65
15
29
25
60
11
80
Max.
0.13
320
250
1.5
Max.
80
6,404,065 B1
6,534,343
6,583,505
°C/W
°C/W
μC
nC
nC
nC
nF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
6,683,344
6,710,405B2
6,710,463
PLUS264
6,727,585
6,759,692
6771478 B2
TM
(IXFB) Outline
IXFB80N50Q2
7,005,734B2