IXFB80N50Q2 IXYS, IXFB80N50Q2 Datasheet
IXFB80N50Q2
Specifications of IXFB80N50Q2
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IXFB80N50Q2 Summary of contents
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... ± GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved IXFB80N50Q2 G Maximum Ratings 500 = 1MΩ 500 GS ± 30 ± 320 5.0 ≤ 150°C 20 960 -55 ... +150 150 -55 ... +150 300 260 30...120/6.7...27 10 Characteristic Values (T = 25°C, unless otherwise specified) J Min ...
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... I 80 DSS D D25 120 0.13 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 1.4 12 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXFB80N50Q2 TM PLUS264 (IXFB) Outline Max °C/W 0.13 °C/W Max 320 A 1.5 V 250 ns μC ...
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... I - Amperes D © 2007 IXYS CORPORATION, All rights reserved 125º 25ºC J 120 160 200 IXFB80N50Q2 Fig. 2. Extended Output Characteristics @ 25 deg. C 200 V = 10V GS 180 9V 8V 160 140 120 100 Volts D S Fig Norm alized to I DS(on) Value vs. Junction Tem perature 3 2 ...
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... S D Fig. 11. Capacitance 100000 f = 1MHz 10000 1000 100 IXYS reserves the right to change limits, test conditions, and dimensions. 25ºC 6.5 7.5 1 1.2 1.4 1.6 C iss C oss C rss Volts IXFB80N50Q2 Fig. 8. Transconductance 120 100 100 I - Amperes D Fig. 10. Gate Charge 250V 40A 10mA ...