IXFK27N80 IXYS, IXFK27N80 Datasheet - Page 3

• Manufacturer Part Number: IXFK27N80
• Description: MOSFET N-CH 800V 27A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK27N80

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 300 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 4.5V @ 8mA
• Gate Charge (qg) @ Vgs: 400nC @ 10V
• Input Capacitance (ciss) @ Vds: 9740pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 27
• Rds(on), Max, Tj=25°c, (?): 0.32
• Ciss, Typ, (pf): 8400
• Qg, Typ, (nc): 350
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2002 IXYS All rights reserved
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Figure 3. R
40
30
20
10
Figure 1. Output Characteristics at 25
Figure 5. Drain Current vs. Case Temperature
30
25
20
15
10
0
5
0
-50
0
0
V
-25
GS
T
J
= 10V
vs. I
10
= 25
2
DS(on)
IXF_25N80
0
O
D
C
IXFK27N80
T
normalized to 0.5 I
J
T
I
= 125
25
D
C
V
20
4
- Amperes
- Degrees C
DS
O
- Volts
C
T
50
J
= 25
V
GS
30
6
75
= 9V
O
C
8V
7V
6V
IXFN27N80
100 125 150
40
D25
8
value
O
C
5V
4V
10
50
Figure 4. R
Figure 6. Admittance Curves
Figure 2. Output Characteristics at 125
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
30
25
20
15
10
40
30
20
10
5
0
0
2
25
0
IXFK 25N80
IXFN 25N80
T
T
J
J
DS(on)
= 125
V
= 125
50
3
4
GS
= 10V
O
o
normalized to 0.5 I
C
C
T
J
V
V
75
4
8
- Degrees C
GS
DS
I
D
= 27A
- Volts
- Volts
T
I
D
J
V
= 13.5A
= 25
100
GS
5
12
= 9V
o
IXFK 27N80
IXFN 27N80
C
8V
7V
6V
D25
125
16
6
value vs. T
O
C
5V
4V
150
7
20
J