IXFK27N80 IXYS, IXFK27N80 Datasheet
IXFK27N80
Manufacturer Part Number
IXFK27N80
Description
MOSFET N-CH 800V 27A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK27N80.pdf
(4 pages)
Specifications of IXFK27N80
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
27A
Vgs(th) (max) @ Id
4.5V @ 8mA
Gate Charge (qg) @ Vgs
400nC @ 10V
Input Capacitance (ciss) @ Vds
9740pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Vdss, Max, (v)
800
Id(cont), Tc=25°c, (a)
27
Rds(on), Max, Tj=25°c, (?)
0.32
Ciss, Typ, (pf)
8400
Qg, Typ, (nc)
350
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
500
Rthjc, Max, (ºc/w)
0.25
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK27N80
Manufacturer:
IXYS
Quantity:
20 000
Company:
Part Number:
IXFK27N80Q
Manufacturer:
TI
Quantity:
12 000
Part Number:
IXFK27N80Q
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
HiPerFET
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
Symbol
V
V
I
I
R
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
T
V
M
Weight
© 2002 IXYS All rights reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
GH(th)
DGR
GS
GSM
AR
D
ISOL
DSS
DS(on)
DSS
d
T
T
Continuous
Transient
T
T
T
T
I
T
T
1.6 mm (0.063 in) from case for 10 s
50/60 Hz, RMS
I
Mounting torque
Terminal connection torque
S
ISOL
V
V
V
V
V
V
V
V
Pulse test, t
duty cycle d 2 %
C
C
C
C
J
C
J
J
GS
GS
GS
GS
DSS
DS
GS(th)
DS
= 25 C
I
Test Conditions
Test Conditions
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C, Chip capability
= 25 C, pulse width limited by T
= 25 C
= 25 C
DM
= 0 V, I
150 C, R
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
= V
temperature coefficient
, di/dt 100 A/ s, V
1 mA
temperature coefficient
TM
GS
D
, I
= 3 mA
DC
D
D
DSS
G
Power MOSFETs
= 8 mA
, V
= 0.5 • I
300 s,
= 2
DS
= 0
t = 1 min
t = 1 s
D25
GS
DD
= 1 M
V
DSS
T
T
25N80
27N80
(T
J
J
,
J
rr
= 25 C
= 125 C
JM
= 25 C, unless otherwise specified)
27N80
25N80
27N80 108
25N80 100
27N80
25N80
min.
800
Not for New Designs
2
Maximum Ratings
0.9/6
800
800
300
IXFK
500
20
30
27
25
14
13
30
10
Characteristic Values
5
0.096
-55 ... +150
-55 ... +150
-
-
-
-0.214
typ.
IXFK 27N80
IXFK 25N80
IXFN 27N80
IXFN 25N80
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
2500
3000
150
800
800
108
100
520
IXFN
20
30
27
25
14
13
30
30
5
max.
0.35
0.30
-
500
4.5
200
2
V/ns
%/K
%/K
mA
nA
mJ
V
V
V~
V~
A
g
C
C
C
C
A
A
A
A
A
A
W
V
V
V
V
TO-264 AA (IXFK)
G = Gate
S = Source
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Applications
Advantages
miniBLOC, SOT-227 B (IXFN)
S
G
International standard packages
JEDEC TO-264 AA, epoxy meet
UL 94 V-0, flammability classification
miniBLOC, with Aluminium nitride
isolation
Low R
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
800 V
800 V
800 V
800 V
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Easy to mount
Space savings
High power density
V
DSS
E153432
DS (on)
D
S
G
HDMOS
D
27 A
25 A
27 A
25 A
I
S
D25
D = Drain
TAB = Drain
TM
G
process
95561D(6/02)
0.30
0.35
0.30
0.35
S
R
DS(on)
D
(TAB)
S
Related parts for IXFK27N80
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
HiPerFET Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
J-K-Type Flip-Flop
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
HiPerRF Power MOSFETs
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Rectifier Module for Three Phase Power Factor Correction
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules /Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
Part Number:
Description:
Thyristor Modules Thyristor/Diode Modules
Manufacturer:
IXYS Corporation
Datasheet:
IXFK27N80 Summary of contents
Page 1
... 0.8 • V DSS DS DSS 0.5 • I DS(on D25 Pulse test, t 300 s, duty cycle © 2002 IXYS All rights reserved Not for New Designs IXFK 27N80 IXFK 25N80 IXFN 27N80 rr IXFN 25N80 Maximum Ratings IXFK IXFN 800 800 800 800 27N80 27 27 ...
Page 2
... -di/dt = 100 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: Characteristic Values ( unless otherwise specified) J min. typ. max. , pulse test 16 28 7930 8400 9740 630 ...
Page 3
... 125 C J 2.2 2.0 1.8 1.6 1 1.2 1.0 0 Amperes D Figure 3. R normalized to 0.5 I DS(on) vs IXF_25N80 20 IXFK27N80 -50 - Degrees C C Figure 5. Drain Current vs. Case Temperature © 2002 IXYS All rights reserved Figure 2. Output Characteristics at 125 C O 2.6 2.4 2.2 2.0 1.8 1 ...
Page 4
... D=0.02 D=0.01 Single pulse 0.001 0.0001 0.001 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 10000 1000 100 400 500 Figure 8. Capacitance Curves T ...