IXFK110N07 IXYS, IXFK110N07 Datasheet - Page 3

• Manufacturer Part Number: IXFK110N07
• Description: MOSFET N-CH 70V 110A TO-264AA
• Manufacturer: IXYS
• Series: HiPerFET™r

Specifications of IXFK110N07

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 70V
• Current - Continuous Drain (id) @ 25° C: 110A
• Vgs(th) (max) @ Id: 4V @ 8mA
• Gate Charge (qg) @ Vgs: 480nC @ 10V
• Input Capacitance (ciss) @ Vds: 9000pF @ 25V
• Power - Max: 500W
• Mounting Type: Through Hole
• Package / Case: TO-264AA
• Vdss, Max, (v): 70
• Id(cont), Tc=25°c, (a): 110
• Rds(on), Max, Tj=25°c, (?): 0.006
• Ciss, Typ, (pf): 9000
• Qg, Typ, (nc): 480
• Trr, Typ, (ns): -
• Trr, Max, (ns): 150
• Pd, (w): 500
• Rthjc, Max, (ºc/w): 0.25
• Package Style: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
600
500
400
300
200
100
Figure 1. Output Characteristics at 25
175
150
125
100
Figure 5. R
75
50
25
0
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0
2
0.0
Figure 3. Admittance Curves
0
T
J
V
T
= 25
DS
J
= 25
100
> 4R
4
O
DS(on)
C
T
o
0.5
J
C
=25
DS(ON)
V
GS
O
normalized to 0.5 I
200
C
V
= 10V
6
I
V
D
GS
DS
- Amperes
- Volts
1.0
- Volts
300
8
T
V
J
=100
GS
400
= 15V
O
1.5
C
10
T
D25
V
J
500
GS
=150
O
C
=10V
value
9V
8V
7V
6V
5V
O
C
12
2.0
600
IXFK 110N06 IXFK 105N07 IXFK 110N07
Figure 6. Normalized R
Temperature
Figure 2. Extended Output Characteristics
600
500
400
300
200
100
Figure 4. Transconductance vs. Drain Current
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0
80
70
60
50
40
30
20
10
0
0
-50 -25
0
T
1
J
=25
V
GS
I
V
100
D
O
2
GS
=10V
C
= 75A
= 10V
0
3
200
25
T
V
4
I
J
C
DS
- Degrees C
DS(on)
- Amperes
50
- Volts
5
300
T
T
vs. Junction
75 100 125 150 175
J
T
J
6
= 150
J
= 100
= 25
400
7
o
o
o
C
C
C
V
GS
8
=10V
9V
8V
7V
6V
500
5V
9
10
3 - 4
600