STW43NM60ND STMicroelectronics, STW43NM60ND Datasheet - Page 6

• Manufacturer Part Number: STW43NM60ND
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW43NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 145nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.075ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 35 A
• Power Dissipation: 255 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8461-5

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
20.5
15.5
10
10
10
10
(S)
10.5
g
(A)
I
0.5
5.5
fs
D
-1
2
1
10
0
0
-1
Transconductance
Electrical characteristics (curves)
Safe operating area
Output characteristics
5
10
10
0
T
15
J
=-50°C
10
20
1
25
10
T
30
2
J
=150°C
T
J
=25°C
V
35
DS
(V)
Doc ID 14402 Rev 3
AM01511v1
AM01508v1
I
D
10ms
10µs
100µs
1ms
(A)
Figure 3.
Figure 5.
Figure 7.
R
DS(on)
0.085
0.080
0.075
0.065
0.060
0.070
(Ω)
0
Static drain-source on resistance
Thermal impedance
Transfer characteristics
10
20
STW43NM60ND
30
AM01512v1
I
D
(A)