IXTT48P20P IXYS, IXTT48P20P Datasheet - Page 5

• Manufacturer Part Number: IXTT48P20P
• Description: MOSFET P-CH 200V 48A TO-268
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTT48P20P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 5400pF @ 25V
• Power - Max: 462W
• Mounting Type: Surface Mount
• Package / Case: TO-268
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Drain-source Breakdown Voltage: - 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 48 A
• Power Dissipation: 462 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -200
• Id(cont), Tc=25°c, (a): -48
• Rds(on), Max, Tj=25°c, (?): 0.085
• Ciss, Typ, (pf): 5400
• Qg, Typ, (nc): 103
• Trr, Typ, (ns): 260
• Pd, (w): 462
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-268
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTH48P20P
IXTT48P20P
Fig. 13. Maximum Transient Thermal Impedance
1.000
0.100
0.010
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_48P20P(B7) 5-13-08