IXTT48P20P IXYS, IXTT48P20P Datasheet - Page 4
![MOSFET P-CH 200V 48A TO-268](/photos/5/55/55547/ixtt48p20p_sml.jpg)
IXTT48P20P
Manufacturer Part Number
IXTT48P20P
Description
MOSFET P-CH 200V 48A TO-268
Manufacturer
IXYS
Series
PolarP™r
Datasheet
1.IXTH48P20P.pdf
(5 pages)
Specifications of IXTT48P20P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
85 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
103nC @ 10V
Input Capacitance (ciss) @ Vds
5400pF @ 25V
Power - Max
462W
Mounting Type
Surface Mount
Package / Case
TO-268
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.085 Ohms
Drain-source Breakdown Voltage
- 200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
462 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-200
Id(cont), Tc=25°c, (a)
-48
Rds(on), Max, Tj=25°c, (?)
0.085
Ciss, Typ, (pf)
5400
Qg, Typ, (nc)
103
Trr, Typ, (ns)
260
Pd, (w)
462
Rthjc, Max, (k/w)
0.27
Package Style
TO-268
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTT48P20P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
-90
-80
-70
-60
-50
-40
-30
-20
-10
-160
-140
-120
-100
100
-80
-60
-40
-20
0
-3.5
0
-0.5
0
f
-4.0
= 1 MHz
-1.0
-5
Fig. 9. Forward Voltage Drop of
-4.5
-1.5
-10
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
-5.0
J
-2.0
Intrinsic Diode
-15
= 125ºC
V
V
GS
V
SD
DS
C rss
-5.5
- Volts
-2.5
-20
- Volts
- Volts
C oss
-6.0
-3.0
-25
T
T
J
J
= - 40ºC
C iss
= 25ºC
125ºC
25ºC
-6.5
-3.5
-30
-7.0
-4.0
-35
-7.5
-4.5
-40
-
1,000
-
100
-
-10
60
55
50
45
40
35
30
25
20
15
10
10
-
-9
-8
-7
-6
-5
-4
-3
-2
-1
5
0
0
1
-
10
0
0
Fig. 12. Forward-Bias Safe Operating Area
R
10
V
I
I
-10
DS(on)
D
G
DS
= - 24A
= -1mA
= -100V
20
Limit
-20
Fig. 8. Transconductance
30
Fig. 10. Gate Charge
-30
Q
40
G
- NanoCoulombs
I
D
V
-40
DS
- Amperes
50
-
100
- Volts
60
DC
-50
70
T
-60
J
100µs
1ms
10ms
100ms
IXTT48P20P
IXTH48P20P
= - 40ºC
80
25ºC
T
T
Single Pulse
-70
125ºC
J
C
= 150ºC
90
= 25ºC
-80
100
-
1000
110
-90