IXTQ36P15P IXYS, IXTQ36P15P Datasheet - Page 6

• Manufacturer Part Number: IXTQ36P15P
• Description: MOSFET P-CH 150V 36A TO-3P
• Manufacturer: IXYS
• Series: PolarP™r

Specifications of IXTQ36P15P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 36A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 36 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): -150
• Id(cont), Tc=25°c, (a): -36
• Rds(on), Max, Tj=25°c, (?): 0.11
• Ciss, Typ, (pf): 3100
• Qg, Typ, (nc): 55
• Trr, Typ, (ns): 228
• Pd, (w): 300
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1.00
0.10
0.01
0.0001
0.001
Fig. 13. Maximum Transient Thermal Impedance
0.01
Pulse Width - Seconds
0.1
IXTA36P15P
IXTH36P15P
1
IXTP36P15P
IXTQ36P15P
IXYS REF: T_36P15P(B5)3-26-08-B
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