IXTQ36P15P IXYS, IXTQ36P15P Datasheet

MOSFET P-CH 150V 36A TO-3P

IXTQ36P15P

Manufacturer Part Number
IXTQ36P15P
Description
MOSFET P-CH 150V 36A TO-3P
Manufacturer
IXYS
Series
PolarP™r
Datasheet

Specifications of IXTQ36P15P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 10V
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
36 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
-150
Id(cont), Tc=25°c, (a)
-36
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
3100
Qg, Typ, (nc)
55
Trr, Typ, (ns)
228
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarP
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
F
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
C
TO-263 (IXTA)
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-3P,TO-220 & TO-247)
Mounting Force (TO-263)
TO-263
TO-220
TO-3P
TO-247
V
V
V
V
V
Test Conditions
G
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= -10V, I
S
DM
GS
, V
DSS
, I
DD
D
, V
D
D (TAB)
= - 250 μA
D
≤ V
= - 250μA
GS
DS
= 0.5 • I
= 0V
DSS
= 0V
, T
J
D25
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
IXTA36P15P
IXTP36P15P
IXTH36P15P
IXTQ36P15P
JM
TO-220 (IXTP)
G
10..65/2.2..14.6
D
-55 ... +150
-55 ... +150
S
- 150
Characteristic Values
Min.
- 2.5
Maximum Ratings
1.13/10
- 150
- 150
- 36
- 90
- 36
±20
±30
300
150
300
260
1.5
2.5
3.0
5.5
6.0
Typ.
10
D (TAB)
- 250 μA
±100 nA
Nm/lb.in.
Max.
- 4.5
110 mΩ
- 10 μA
N/lb.
V/ns
°C
°C
°C
°C
°C
W
V
V
V
V
V
A
A
A
V
g
g
g
g
J
V
I
R
TO-247 (IXTH)
TO-3P (IXTQ)
G = Gate
S = Source
Features
Advantages
Applications
D25
Avalanche Rated
International Standard Packages
Rugged PolarP
Low Package Inductance
Fast Intrinsic Diode
Dynamic dV/dt Rated
Low R
Low Drain-to-Tab Capacitance
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
DSS
DS(on)
G
D
G
DS(ON)
D
S
≤ ≤ ≤ ≤ ≤
=
=
S
and Q
D
TAB = Drain
TM
- 150V
- 36A
Process
G
110mΩ Ω Ω Ω Ω
= Drain
D (TAB)
DS99791C(6/09)
D (TAB)

Related parts for IXTQ36P15P

IXTQ36P15P Summary of contents

Page 1

... GSS DSS DS DSS -10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P TO-220 (IXTP Maximum Ratings - 150 = 1MΩ - 150 GS ±20 ± 1.5 ≤ 150° 300 -55 ... +150 150 -55 ... +150 300 260 1.13/10 10..65/2.2..14.6 2 ...

Page 2

... I 20 DSS D D25 18 0.25 0.50 Characteristic Values Min. Typ. JM 228 2.0 -17.6 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P Max 0.42 °C/W °C/W °C/W Max 140 μC A 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 ...

Page 3

... TO-263 (IXTA) Outline TO-3P (IXTQ) Outline Pins Gate 2 - Drain 3 - Source 4, TAB - Drain © 2009 IXYS CORPORATION, All Rights Reserved IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P TO-220 (IXTP) Outline Pins Gate 2 - Drain TO-247 (IXTH) Outline ∅ Terminals Gate 2 - Drain Dim. Millimeter Inches Min. Max. ...

Page 4

... Fig. 2. Extended Output Characteristics @ 25º -10 - Volts DS Fig Normalized to I DS(on) vs. Junction Temperature V = -10V 36A D -50 - Degrees Centigrade J Fig. 6. Maximum Drain Current vs. Case Temperature 0 -50 - Degrees Centigrade J IXTP36P15P IXTQ36P15P V = -10V -20 -25 -30 = -18A -18A D 75 100 125 150 75 100 125 150 IXYS REF: T_36P15P(B5)3-26-08-B ...

Page 5

... T = 25º -3.0 -3.5 -4.0 -4.5 100 - C iss 10 C oss - C rss - 1 -25 -30 -35 - IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P Fig. 8. Transconductance 40ºC J -10 -20 -30 -40 - Amperes D Fig. 10. Gate Charge V = -100V -18A -1mA NanoCoulombs G Fig. 12. Forward-Bias Safe Operating Area R Limit DS(on) 25µs 100µs ...

Page 6

... IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. Fig. 13. Maximum Transient Thermal Impedance 0.01 0.1 Pulse Width - Seconds IXTA36P15P IXTP36P15P IXTH36P15P IXTQ36P15P 1 IXYS REF: T_36P15P(B5)3-26-08-B 10 ...

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