STF16N65M5 STMicroelectronics, STF16N65M5 Datasheet - Page 19

• Manufacturer Part Number: STF16N65M5
• Description: MOSFET N-CH 650V 12A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 25 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8893-5

STF/I/P/U/W16N65M5
5
Revision history
Table 13.
12-Feb-2009
10-Feb-2011
21-Oct-2010
Date
Document revision history
Revision
1
2
3
First release.
– Document status promoted from preliminary data to datasheet.
– Added new package, mechanical data: I²PAK.
– Removed DPAK, D²PAK packages and mechanical data.
Modified R
Doc ID 15210 Rev 3
DS(on)
value (see
Table 4
Changes
and
Figure
11).
Revision history
19/20