IXTA6N50D2 IXYS, IXTA6N50D2 Datasheet - Page 5

• Manufacturer Part Number: IXTA6N50D2
• Description: MOSFET N-CH 500V 6A D2PAK
• Manufacturer: IXYS

Specifications of IXTA6N50D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 500 mOhm @ 3A, 0V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Gate Charge (qg) @ Vgs: 96nC @ 5V
• Input Capacitance (ciss) @ Vds: 2800pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vds, Max, (v): 500
• Id(on), Min, (a): 6
• Rds(on), Max, (?): 0.5
• Vgs(off), Max, (v): -4
• Ciss, Typ, (pf): 2800
• Crss, Typ, (pf): 64
• Qg, Typ, (nc): 96
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.41
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

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10,000
100.0
1,000
10.0
1.000
0.100
0.010
0.001
100
1.0
0.1
10
0.00001
10
0
R
DS(on)
f
T
T
Single Pulse
J
C
= 1 MHz
= 150ºC
= 25ºC
5
Limit
Fig. 15. Forward-Bias Safe Operating Area
10
Fig. 13. Capacitance
0.0001
15
@ T
V
V
DS
DS
C
100
- Volts
20
- Volts
= 25ºC
25
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
C rss
C oss
DC
C iss
35
100µs
1ms
10ms
100ms
Pulse Width - Seconds
1,000
40
0.01
100.0
10.0
1.0
0.1
-1
-2
-3
-4
-5
5
4
3
2
1
0
10
0
R
V
I
I
T
T
Single Pulse
DS(on)
D
G
J
C
DS
10
= 3A
= 10mA
= 150ºC
= 75ºC
= 250V
Limit
Fig. 16. Forward-Bias Safe Operating Area
20
0.1
IXTA6N50D2 IXTP6N50D2
30
Fig. 14. Gate Charge
Q
40
G
- NanoCoulombs
@ T
V
DS
50
100
- Volts
C
= 75ºC
60
1
IXTH6N50D2
70
80
DC
IXYS REF: T_6N50D2(6C)8-13-09
25µs
100µs
1ms
10ms
100ms
90
100
1,000
10