IXTA6N50D2 IXYS, IXTA6N50D2 Datasheet - Page 4
IXTA6N50D2
Manufacturer Part Number
IXTA6N50D2
Description
MOSFET N-CH 500V 6A D2PAK
Manufacturer
IXYS
Datasheet
1.IXTH6N50D2.pdf
(5 pages)
Specifications of IXTA6N50D2
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Depletion Mode
Rds On (max) @ Id, Vgs
500 mOhm @ 3A, 0V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
6A
Gate Charge (qg) @ Vgs
96nC @ 5V
Input Capacitance (ciss) @ Vds
2800pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vds, Max, (v)
500
Id(on), Min, (a)
6
Rds(on), Max, (?)
0.5
Vgs(off), Max, (v)
-4
Ciss, Typ, (pf)
2800
Crss, Typ, (pf)
64
Qg, Typ, (nc)
96
Pd, (w)
300
Rthjc, Max, (ºc/w)
0.41
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Vgs(th) (max) @ Id
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTA6N50D2
Manufacturer:
IXYS
Quantity:
1 200
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
2.6
2.2
1.8
1.4
1.0
0.6
0.2
1.3
1.2
1.1
1.0
0.9
0.8
20
18
16
14
12
10
8
6
4
2
0
-3.5
-50
-50
V
Fig. 7. Normalized R
I
V
GS
D
-3.0
DS
= 3A
= 0V
-25
-25
= 30V
Fig. 11. Breakdown and Threshold Voltages
-2.5
0
0
-2.0
vs. Junction Temperature
T
T
Fig. 9. Input Admittance
J
J
- Degrees Centigrade
- Degrees Centigrade
25
25
-1.5
V
T
DS(on)
GS
J
= 125ºC
- Volts
- 40ºC
-1.0
25ºC
50
50
vs. Junction Temperature
-0.5
V
75
75
GS(off)
0.0
@ V
BV
100
100
DSX
DS
0.5
= 25V
@ V
GS
125
125
= - 5V
1.0
150
150
1.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
12
10
18
16
14
12
10
8
6
4
2
0
8
6
4
2
0
0.3
0
0
V
T
DS
J
V
= - 40ºC
GS
= 30V
2
2
125ºC
= -10V
25ºC
Fig. 8. R
0.4
4
4
Fig. 12. Forward Voltage Drop of
IXTA6N50D2 IXTP6N50D2
Fig. 10. Transconductance
DS(on)
6
6
0.5
vs. Drain Current
Intrinsic Diode
I
I
Normalized to I
D
D
8
8
V
T
- Amperes
- Amperes
J
SD
T
= 125ºC
J
- Volts
= 25ºC
0.6
10
10
T
J
= 125ºC
12
12
0.7
IXTH6N50D2
D
= 3A Value
14
14
V
GS
= 0V
16
16
5V
0.8
T
- - - -
J
= 25ºC
18
18
0.9
20
20