STW7NK90Z STMicroelectronics, STW7NK90Z Datasheet - Page 10

• Manufacturer Part Number: STW7NK90Z
• Description: MOSFET N-CH 900V 5.8A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW7NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 60.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 2.9A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 1.56ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 2 Ohms
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7624-5; STW7NK90Z

Test circuit
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Figure 18. Unclamped inductive load test
Figure 20. Switching times test circuit for
Figure 22. Test circuit for inductive load
circuit
resistive load
switching and diode recovery times
Test circuit
STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
Figure 19. Unclamped inductive waveform
Figure 21. Gate charge test circuit