STP80NF10FP STMicroelectronics, STP80NF10FP Datasheet - Page 4

• Manufacturer Part Number: STP80NF10FP
• Description: MOSFET N-CH 100V 38A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP80NF10FP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 38A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 189nC @ 10V
• Input Capacitance (ciss) @ Vds: 4300pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.015 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 80 A
• Power Dissipation: 300000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 40A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 12mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5897-5; STP80NF10FP

Electrical characteristics
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4/12
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
V
Symbol
Symbol
R
CASE
V
(BR)DSS
g
C
I
I
DS(on)
C
C
Q
Q
GS(th)
DSS
GSS
fs
Q
oss
rss
iss
gs
gd
(1)
g
=25°C unless otherwise specified)
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
V
V
V
V
V
I
V
V
V
V
V
D
DS
DS
GS
DD
GS
DS
DS
GS
DS
GS
= 250µA, V
Test condictions
Test condictions
=25V
= 25V, f = 1 MHz,
= 0
= 80V, I
= 10V
= Max rating
= Max rating @125°C
= V
= ±20V
= 10V, I
GS
,
, I
I
D
D
D
D
GS
=40 A
= 80A,
= 40A
= 250µA
= 0
Min.
Min.
100
2
0.012
4300
Typ.
Typ.
600
230
140
80
23
51
3
STP80NF10FP
0.015
Max.
Max.
±100
189
10
1
4
Unit
Unit
nC
nC
nC
pF
pF
pF
µA
µA
nA
S
Ω
V
V