STP2NK100Z STMicroelectronics, STP2NK100Z Datasheet - Page 5

• Manufacturer Part Number: STP2NK100Z
• Description: MOSFET N-CH 1000V 1.85A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP2NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 Ohm @ 900mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 1.85A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 499pF @ 25V
• Power - Max: 70W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 1.85A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 6.25ohm
• Rds(on) Test Voltage Vgs: 10V
• Configuration: Single
• Resistance Drain-source Rds (on): 8.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2 A
• Power Dissipation: 70000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7518-5; STP2NK100Z

STD2NK100Z - STP2NK100Z - STU2NK100Z
Table 7.
Table 8.
1. Pulse width limited by package
2. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 9.
1. The built in back-to-back zener diodes have specifically been designed to enhance not only the device’s
Symbol
Symbol
Symbol
I
BV
V
SDM
I
I
t
t
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated zener diodes thus avoid the
usage of external components.
SD
d(on)
d(off)
RRM
RRM
I
Q
Q
(1)
SD
t
t
t
t
GSO
rr
rr
r
r
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Gate-source zener diode
Parameter
Parameter
Parameter
I
I
V
(see Figure 21)
I
V
(see Figure 21)
I
V
R
(see Figure 16)
SD
SD
SD
GS
DD
DD
DD
G
= 1.85 A, V
= 1.85 A, di/dt= 100 A/µs,
= 1.85 A, di/dt= 100 A/µs,
=4.7 Ω, V
= ±1mA (open drain)
= 60 V
= 60 V, Tj=150 °C
= 500 V, I
Test conditions
Test conditions
Test conditions
GS
D
GS
= 0.9 A,
=10 V
=0
Electrical characteristics
Min.
Min.
Min.
30
Typ.
Typ.
Typ.
41.5
32.5
476
532
1.6
6.9
1.9
7.2
6.5
88
Max.
Max.
Max.
1.85
7.4
1.6
Unit
Unit
Unit
ns
ns
ns
ns
µC
µC
ns
ns
A
A
V
A
A
V
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