IXTP152N085T IXYS, IXTP152N085T Datasheet - Page 3

• Manufacturer Part Number: IXTP152N085T
• Description: MOSFET N-CH 85V 152A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP152N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 152A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 100 s
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 152 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 152
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS CORPORATION All rights reserved
160
140
120
100
160
140
120
100
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
80
60
40
20
80
60
40
20
0
0
3
2
1
0
0
0
Fig. 5. R
V
0.2
0.1
GS
= 10V
0.4
15V - - - -
50
0.2
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
DS(on)
0.6
0.3
vs. Drain Current
100
0.8
Normalized to I
0.4
I
D
V
V
- Amperes
DS
1
DS
@ 150ºC
@ 25ºC
0.5
- Volts
- Volts
150
1.2
V
0.6
V
GS
GS
1.4
= 10V
= 10V
0.7
9V
8V
9V
8V
1.6
200
D
= 76A Value
0.8
T
T
1.8
J
J
= 175ºC
= 25ºC
0.9
250
5V
7V
6V
2
5V
7V
6V
2.2
1
300
1.1
2.4
140
120
100
300
270
240
210
180
150
120
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
80
60
40
20
90
60
30
0
0
-50
-50
0
V
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
Fig. 6. Drain Current vs. Case Temperature
GS
Fig. 4. R
V
Fig. 2. Extended Output Characteristics
GS
-25
-25
= 10V
1
9V
8V
= 10V
0
0
DS(on)
vs. Junction Temperature
7V
6V
5V
2
T
T
C
J
- Degrees Centigrade
- Degrees Centigrade
25
25
Normalized to I
3
V
DS
@ 25ºC
50
50
I
- Volts
D
= 152A
4
75
75
IXTP152N085T
IXTA152N085T
5
100
100
D
= 76A Value
I
D
= 76A
6
125
125
150
150
7
175
175
8