IXTP152N085T IXYS, IXTP152N085T Datasheet - Page 2

• Manufacturer Part Number: IXTP152N085T
• Description: MOSFET N-CH 85V 152A TO-220
• Manufacturer: IXYS
• Series: TrenchMV™r

Specifications of IXTP152N085T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 152A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 114nC @ 10V
• Input Capacitance (ciss) @ Vds: 5500pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Forward Transconductance Gfs (max / Min): 100 s
• Drain-source Breakdown Voltage: 85 V
• Continuous Drain Current: 152 A
• Power Dissipation: 360 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 85
• Id(cont), Tc=25°c, (a): 152
• Rds(on), Max, Tj=25°c, (?): 0.0070
• Ciss, Typ, (pf): 5500
• Qg, Typ, (nc): 114
• Trr, Typ, (ns): 90
• Trr, Max, (ns): -
• Pd, (w): 360
• Rthjc, Max, (k/w): 0.42
• Package Style: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
T
I
I
V
t
IXYS MOSFETs and IGBTs are covered by 4,835,592
SM
d(on)
d(off)
f
S
r
rr
Notes: 1.
one or moreof the following U.S. patents:
fs
J
IXYS reserves the right to change limits, test conditions, and dimensions.
oss
thJC
thCH
SD
iss
rss
g(on)
gs
gd
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
J
= 25° C unless otherwise specified)
= 25° C unless otherwise specified)
2. On through-hole packages, R
location must be 5 mm or less from the package body.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
Test Conditions
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
Pulse width limited by T
I
I
V
F
F
DS
GS
GS
GS
GS
R
G
= 25 A, V
= 25 A, -di/dt = 100 A/µs
= 40 V, V
= 10 V; I
= 5 Ω (External)
= 10 V, V
PRELIMINARY TECHNICAL INFORMATION
= 0 V
= 0 V, V
= 10 V, V
GS
DS
D
GS
DS
= 60 A, Note 1
DS
= 0 V, Note 1
= 25 V, f = 1 MHz
= 0 V
= 0.5 V
= 0.5 V
4,850,072
4,881,106
DSS
DSS
JM
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 25 A
DS(on)
= 25 A
Kelvin test contact
5,049,961
5,063,307
5,187,117
Min.
Min.
5,237,481
5,381,025
5,486,715
60
Characteristic Values
Characteristic Values
5500
Typ.
Typ.
0.50
100
720
150
114
30
50
50
45
30
35
90
6,162,665
6,259,123 B1
6,306,728 B1
Max.
Max.
0.42 °C/W
152
410
1.0
°C/W
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
pF
pF
pF
n s
n s
n s
ns
ns
S
V
A
A
TO-263AA (IXTA) Outline
TO-220AB (IXTP) Outline
6,683,344
6,710,405B2
6,710,463
Pins: 1 - Gate
Dim.
A
A1
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
R
Pins: 1 - Gate
3 - Source 4, TAB - Drain
14.61
4.06
2.03
0.51
1.14
0.46
1.14
8.64
7.11
9.65
6.86
2.54
2.29
1.02
1.27
0.46
Min.
3 - Source 4, TAB - Drain
Millimeter
0
6,727,585
6,759,692
6771478 B2
IXTP152N085T
IXTA152N085T
10.29
15.88
Max.
BSC
4.83
2.79
0.99
1.40
0.74
1.40
9.65
8.13
8.13
2.79
1.40
1.78
0.38
0.74
2 - Drain
2 - Drain
.160
.080
.020
.045
.018
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
.018
Min.
7,005,734 B2
7,063,975 B2
7,071,537
Inches
0
Max.
BSC
.190
.110
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.015
.029