IXTA3N100D2 IXYS, IXTA3N100D2 Datasheet - Page 5

• Manufacturer Part Number: IXTA3N100D2
• Description: MOSFET N-CH 1000V 3A D2PAK
• Manufacturer: IXYS

Specifications of IXTA3N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 37.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vds, Max, (v): 1000
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 5.5
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 1020
• Crss, Typ, (pf): 17
• Qg, Typ, (nc): 37.5
• Pd, (w): 125
• Rthjc, Max, (ºc/w): 1
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

© 2009 IXYS CORPORATION, All Rights Reserved
10,000
10.00
1,000
1.00
0.10
0.01
10.00
100
1.00
0.10
0.01
2.00
10
0.00001
10
0
T
T
Single Pulse
J
C
f
= 150ºC
R
= 25ºC
= 1 MHz
DS(on)
Fig. 15. Forward-Bias Safe Operating Area
5
Limit
10
Fig. 13. Capacitance
0.0001
15
@ T
V
DS
V
C
100
- Volts
DS
= 25ºC
20
- Volts
25
Fig. 17. Maximum Transient Thermal Impedance
C iss
C oss
C rss
Fig. 17. Maximum Transient Thermal Impedance
0.001
30
35
1,000
25µs
100µs
1ms
10ms
100ms
DC
Pulse Width - Seconds
40
.
0.01
10.00
1.00
0.10
0.01
-1
-2
-3
-4
-5
5
4
3
2
1
0
10
0
T
T
Single Pulse
V
I
I
J
C
D
G
DS
R
= 150ºC
= 75ºC
= 1.5A
= 10mA
Fig. 16. Forward-Bias Safe Operating Area
DS(on)
= 500V
5
Limit
10
0.1
Fig. 14. Gate Charge
15
@ T
Q
V
G
DS
- NanoCoulombs
C
100
- Volts
= 75ºC
20
25
1
IXTA3N100D2
IXTP3N100D2
30
IXYS REF: T_3N100D2(3C)8-27-09
35
1,000
25µs
100µs
1ms
10ms
100ms
DC
10
40