IXTA3N100D2 IXYS, IXTA3N100D2 Datasheet - Page 2

• Manufacturer Part Number: IXTA3N100D2
• Description: MOSFET N-CH 1000V 3A D2PAK
• Manufacturer: IXYS

Specifications of IXTA3N100D2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Depletion Mode
• Rds On (max) @ Id, Vgs: 5.5 Ohm @ 1.5A, 0V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Gate Charge (qg) @ Vgs: 37.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 1020pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vds, Max, (v): 1000
• Id(on), Min, (a): 3
• Rds(on), Max, (?): 5.5
• Vgs(off), Max, (v): -4.5
• Ciss, Typ, (pf): 1020
• Crss, Typ, (pf): 17
• Qg, Typ, (nc): 37.5
• Pd, (w): 125
• Rthjc, Max, (ºc/w): 1
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Vgs(th) (max) @ Id: -

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Safe-Operating-Area Specification
Symbol
SOA
Source-Drain Diode
Symbol
(T
V
t
I
Q
Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
J
J
The product presented herein is under development. The Technical Specifications offered are derived
from data gathered during objective characterizations of preliminary engineering lots; but also may yet
contain some information supplied during a pre-production design evaluation. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
V
V
Resistive Switching Times
V
R
V
TO-220
Test Conditions
V
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
DS
R
G
= 3A, V
= 3A, -di/dt = 100A/μs
= 100V, V
PRELIMINARY TECHNICAL INFORMATION
= 30V, I
= -10V, V
= ± 5V, V
= 3.3Ω (External)
= 5V, V
= 800V, I
GS
DS
D
= -10V, Note 1
GS
= 1.5A, Note 1
DS
DS
D
= 500V, I
= 94mA, T
= -10V
4,835,592
4,881,106
= 500V, I
= 25V, f = 1MHz
D
4,931,844
5,017,508
5,034,796
= 1.5A
D
C
= 1.5A
= 75°C, Tp = 5s
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
Characteristic Values
1.2
Min.
Characteristic Values
Characteristic Values
Min.
Min.
75
6,162,665
6,259,123 B1
6,306,728 B1
1020
37.5
21.2
0.50
Typ.
12.7
6.16
2.0
4.4
970
Typ.
Typ.
68
17
27
67
34
40
0.8
Max.
1.0 °C/W
6,404,065 B1
6,534,343
6,583,505
Max.
Max.
1.3
°C/W
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
W
S
V
A
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
Dim.
A
b
b2
c
c2
D
D1
E
E1
e
L
L1
L2
L3
L4
3 - Source
14.61
4.06
0.51
1.14
0.40
1.14
8.64
8.00
9.65
6.22
2.54
2.29
1.02
1.27
Min.
Millimeter
0
7,005,734 B2
7,063,975 B2
IXTA3N100D2
IXTP3N100D2
10.41
15.88
Max.
4.83
0.99
1.40
0.74
1.40
9.65
8.89
8.13
BSC
2.79
1.40
1.78
0.13
1. Gate
2. Drain
3. Source
4. Drain
Side
Bottom
2 - Drain
4 - Drain
Min.
.160
.020
.045
.016
.045
.340
.280
.380
.270
.100
.575
.090
.040
.050
7,157,338B2
Inches
0
Max.
BSC
.190
.039
.055
.029
.055
.380
.320
.405
.320
.625
.110
.055
.070
.005